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HSY8120B1ABC

HXY MOSFET · DC-DC Converters · SOT-23-6L

HSY8120B1ABC from HXY MOSFET, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BST passive Bootstrap pin for the high-side gate drive; the datasheet specifies a 10nF capacitor connected from this pin to SW, and the BST voltage is rated -0.3V to SW+6V.
2 GND power_in Ground reference pin for the IC; the input capacitor should be placed close to the IN and GND pins with the GND trace routed directly under the IC body.
3 FB input Feedback input that connects to an external resistor divider to set the output voltage; the FB voltage is 0.588V to 0.612V (0.6V typical) and its absolute maximum is -0.3V to 6V.
4 EN input Enable pin that must be driven high to enable the regulator and low to disable it, with a rising threshold of 1.5V, a falling threshold of 1.3V, and an absolute maximum of 19V.
5 VIN power_in Supply voltage input that should be bypassed to GND with a 4.7µF ceramic capacitor, with an operating input range of 4.2V to 18V and an input OVP threshold of 19V.
6 SW output Inductor connection pin that drives the switching node between the device and the output inductor, with a 160mΩ high-side and 95mΩ low-side MOSFET integrated and an absolute maximum of 19V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23-6L
Category Power Management ICs
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Voltage Range 4.2 18 V 3
FB Voltage 0.588 0.6 0.612 V 3
Input Shutdown Current 7 14 µA 3
FB Input Current 0 1 µA 3
IN, SW, EN Voltage -0.3 19 V 2
BST Voltage -0.3 V Maximum printed as SW+6V 2
FB Voltage -0.3 6 V 2
Operating Temperature Range -40 85 °C 2
Storage Temperature Range -55 150 °C 2
ESD HBM (Human Body Model) 2 KV 2
Input UVLO Rising 4.2 V Hysteresis=340mV 3
Input OVP Rising 19 V Hysteresis=1V 3
Input Supply Current 700 µA VFB=0.65V 3
Switching Frequency 500 kHz 3
Maximum Duty Cycle 99 % 3
Short Circuit Hiccup Time On Time 2 mS 3
Short Circuit Hiccup Time Off Time 6 mS 3
FB Hiccup Threshold 0.2 V 3
High Side Switch On Resistance 160 mΩ 3
Low Side Switch On Resistance 95 mΩ 3
High Side Current Limit 3.5 A 3
SW Leakage Current 20 µA IN=SW=12V 3
EN Rising Threshold 1.5 V 3
EN Falling Threshold 1.3 V 3
EN Input Current 1 uA VEN=2V 3
Thermal Shutdown Rising 150 °C Hysteresis =40°C 3
Thermal Resistance Junction-to-Case JC 90 °C/W SOT-23-6L 2

CAD (KiCad official)

  • Symbol: HSY8120B1ABC
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: hsy8120b1abc-etched.step / hsy8120b1abc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsy8120b1abc.step / hsy8120b1abc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (8 pp, sha256 3f2bdbb9a2ea84ca, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF