component
HSW6822
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2h ago |
| viewers | 2h ago |
| hsw6822-etched.glb | 2h ago |
| hsw6822-etched.step | 2h ago |
| hsw6822-hero.glb | 2h ago |
| hsw6822-hero.overlay.json | 2h ago |
| hsw6822.glb | 2h ago |
| hsw6822.kicad_mod | 2h ago |
| hsw6822.kicad_sym | 2h ago |
| hsw6822.lbr | 2h ago |
| hsw6822.step | 2h ago |
| package.json | 2h ago |
| page.json | 2h ago |
| README.md | 2h ago |
HSW6822
HUASHUO · MOSFETs · SOT-23-6L
HSW6822 from HUASHUO, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±12 V, threshold 0.4 to 1.2 V. |
| 2 | S2 | passive | Source of MOSFET 2; drain current up to 5 A continuous at TA=25°C. |
| 3 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±12 V, threshold 0.4 to 1.2 V. |
| 4 | D2 | passive | Drain of MOSFET 2; drain-source voltage rated 20 V, continuous 5 A at TA=25°C, pulsed 20 A. |
| 5 | S1 | passive | Source of MOSFET 1; drain current up to 5 A continuous at TA=25°C. |
| 6 | D1 | passive | Drain of MOSFET 1; drain-source voltage rated 20 V, continuous 5 A at TA=25°C, pulsed 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 17 | 22 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 24 | 30 | mΩ | VGS=2.5V, ID=3A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.75 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=20V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=20V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 5 | A | TA=25℃, VGS @ 4.5V | 1 | ||
| Continuous Drain Current | ID | 4 | A | TA=70℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Total Power Dissipation | PD | 1.7 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 90 | ℃/W | Surface mounted on 1 inch² FR-4 board with 2OZ copper (note 1) | 1 |
CAD (KiCad official)
- Symbol:
HSW6822 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
hsw6822-etched.step/hsw6822-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsw6822.step/hsw6822.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (5 pp, sha256
ae20a1fe5f23ea71, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).