# HSW6800

**HUASHUO** · MOSFETs · SOT-23-6L

HSW6800 from HUASHUO, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1, with a gate-source voltage rating of ±12 V and a threshold of 0.6 to 1.3 V. |
| 2 | S2 | passive | Source of MOSFET 2, as printed on the pin configuration diagram, with a continuous drain current of 4 A at TA=25℃. |
| 3 | G2 | input | Gate of MOSFET 2, with a gate-source voltage rating of ±12 V and a threshold of 0.6 to 1.3 V. |
| 4 | D2 | passive | Drain of MOSFET 2, with a drain-source voltage rating of 30 V and a pulsed drain current of 16 A. |
| 5 | S1 | passive | Source of MOSFET 1, as printed on the pin configuration diagram, with a continuous drain current of 4 A at TA=25℃. |
| 6 | D1 | passive | Drain of MOSFET 1, with a drain-source voltage rating of 30 V and a pulsed drain current of 16 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID@TA=25℃ |  |  | 4 | A | VGS @ 4.5V | 1 |
| Continuous Drain Current | ID@TA=70℃ |  |  | 3 | A | VGS @ 4.5V | 1 |
| Pulsed Drain Current | IDM |  |  | 16 | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 1.4 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 90 | ℃/W | Surface mounted on 1 inch² FR-4 board with 2OZ copper | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 32 | 45 | mΩ | VGS=4.5V, ID=4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 45 | 60 | mΩ | VGS=2.5V, ID=3A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.6 | 0.9 | 1.3 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 4 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 16 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSW6800`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `hsw6800-etched.step` / `hsw6800-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsw6800.step` / `hsw6800.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757800574559899648) (6 pp, sha256 `40b5a12adec7859a`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsw6800-datasheet.pdf)