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HSW2N10D

Public Made by Adom

by adom

HUASHUO MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSW2N10D

HUASHUO · MOSFETs · SOT-23-6L

HSW2N10D from HUASHUO, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of MOSFET 1; gate-source voltage limited to ±20 V, threshold 1.0 to 2.0 V.
2 S2 passive Source of MOSFET 2.
3 G2 input Gate of MOSFET 2; gate-source voltage limited to ±20 V, threshold 1.0 to 2.0 V.
4 D2 passive Drain of MOSFET 2; drain-source voltage rated 100 V, continuous current 2 A at TA=25℃.
5 S1 passive Source of MOSFET 1.
6 D1 passive Drain of MOSFET 1; drain-source voltage rated 100 V, continuous current 2 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ 2 A VGS @ 4.5V, TA=25℃ 1
Continuous Drain Current ID@TA=70℃ 1.6 A VGS @ 4.5V, TA=70℃ 1
Pulsed Drain Current IDM 8 A 1
Total Power Dissipation PD@TA=25℃ 0.7 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 100 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 220 260 mΩ VGS=4.5V, ID=2A 2
Static Drain-Source On-Resistance RDS(ON) 240 280 mΩ VGS=2.5V, ID=1.5A 2
Gate Threshold Voltage VGS(th) 1 1.4 2 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=100V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=100V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSW2N10D
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: hsw2n10d-etched.step / hsw2n10d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsw2n10d.step / hsw2n10d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (5 pp, sha256 57c540f27090ab40, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF