component
HSW2004
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HUASHUO MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSW2004
HUASHUO · MOSFETs · SOT-23-6
HSW2004 from HUASHUO, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1 (N-channel, VDS 20 V), gate-source voltage limited to ±12 V. |
| 2 | S2 | passive | Source of MOSFET 2 (P-channel, VDS -20 V). |
| 3 | G2 | input | Gate of MOSFET 2 (P-channel), gate-source voltage limited to ±12 V. |
| 4 | D2 | passive | Drain of MOSFET 2 (P-channel), continuous drain current -4 A at TA=25℃ and pulsed -12 A. |
| 5 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 20 V). |
| 6 | D1 | passive | Drain of MOSFET 1 (N-channel), continuous drain current 4 A at TA=25℃ and pulsed 12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | 20 | V | 1 | |||
| P-ch Drain-Source Voltage | VDS | -20 | V | 1 | |||
| N-ch Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| P-ch Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| N-ch Continuous Drain Current at TA=25℃ | ID@TA=25℃ | 4 | A | VGS @ -4.5V | 1 | ||
| P-ch Continuous Drain Current at TA=25℃ | ID@TA=25℃ | -4 | A | VGS @ -4.5V | 1 | ||
| N-ch Continuous Drain Current at TA=70℃ | ID@TA=70℃ | 2.4 | A | VGS @ -4.5V | 1 | ||
| P-ch Continuous Drain Current at TA=70℃ | ID@TA=70℃ | -2.4 | A | VGS @ -4.5V | 1 | ||
| N-ch Pulsed Drain Current | IDM | 12 | A | 1 | |||
| P-ch Pulsed Drain Current | IDM | -12 | A | 1 | |||
| N-ch Total Power Dissipation at TA=25℃ | PD@TA=25℃ | 1.4 | W | 1 | |||
| P-ch Total Power Dissipation at TA=25℃ | PD@TA=25℃ | 1.4 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | 1 | |||
| N-ch Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V , ID=250uA | 2 | ||
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 19 | 24 | mΩ | VGS=4.5V , ID=4A | 2 | |
| N-ch Static Drain-Source On-Resistance | RDS(ON) | 26 | 34 | mΩ | VGS=2.5V , ID=3A | 2 | |
| N-ch Gate Threshold Voltage | VGS(th) | 0.5 | 0.8 | 1.2 | V | VGS=VDS , ID =250uA | 2 |
| N-ch Drain-Source Leakage Current at TJ=25℃ | IDSS | 1 | uA | VDS=16V , VGS=0V , TJ=25℃ | 2 | ||
| N-ch Drain-Source Leakage Current at TJ=55℃ | IDSS | 5 | uA | VDS=16V , VGS=0V , TJ=55℃ | 2 | ||
| N-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V , VDS=0V | 2 | |
| N-ch Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| P-ch Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V , ID=-250uA | 5 | ||
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 35 | 45 | mΩ | VGS=-4.5V , ID=-4A | 5 | |
| P-ch Static Drain-Source On-Resistance | RDS(ON) | 50 | 65 | mΩ | VGS=-2.5V , ID=-3A | 5 | |
| P-ch Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VGS=VDS , ID =-250uA | 5 |
| P-ch Drain-Source Leakage Current at TJ=25℃ | IDSS | -1 | uA | VDS=-16V , VGS=0V , TJ=25℃ | 5 | ||
| P-ch Drain-Source Leakage Current at TJ=55℃ | IDSS | -5 | uA | VDS=-16V , VGS=0V , TJ=55℃ | 5 | ||
| P-ch Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V , VDS=0V | 5 | |
| P-ch Diode Forward Voltage | VSD | -0.81 | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 5 |
CAD (KiCad official)
- Symbol:
HSW2004 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
hsw2004-etched.step/hsw2004-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsw2004.step/hsw2004.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (8 pp, sha256
f7cc5bd09f484ebd, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSW2004
**HUASHUO** · MOSFETs · SOT-23-6
HSW2004 from HUASHUO, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of MOSFET 1 (N-channel, VDS 20 V), gate-source voltage limited to ±12 V. |
| 2 | S2 | passive | Source of MOSFET 2 (P-channel, VDS -20 V). |
| 3 | G2 | input | Gate of MOSFET 2 (P-channel), gate-source voltage limited to ±12 V. |
| 4 | D2 | passive | Drain of MOSFET 2 (P-channel), continuous drain current -4 A at TA=25℃ and pulsed -12 A. |
| 5 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 20 V). |
| 6 | D1 | passive | Drain of MOSFET 1 (N-channel), continuous drain current 4 A at TA=25℃ and pulsed 12 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| P-ch Drain-Source Voltage | VDS | | | -20 | V | | 1 |
| N-ch Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| P-ch Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| N-ch Continuous Drain Current at TA=25℃ | ID@TA=25℃ | | | 4 | A | VGS @ -4.5V | 1 |
| P-ch Continuous Drain Current at TA=25℃ | ID@TA=25℃ | | | -4 | A | VGS @ -4.5V | 1 |
| N-ch Continuous Drain Current at TA=70℃ | ID@TA=70℃ | | | 2.4 | A | VGS @ -4.5V | 1 |
| P-ch Continuous Drain Current at TA=70℃ | ID@TA=70℃ | | | -2.4 | A | VGS @ -4.5V | 1 |
| N-ch Pulsed Drain Current | IDM | | | 12 | A | | 1 |
| P-ch Pulsed Drain Current | IDM | | | -12 | A | | 1 |
| N-ch Total Power Dissipation at TA=25℃ | PD@TA=25℃ | | | 1.4 | W | | 1 |
| P-ch Total Power Dissipation at TA=25℃ | PD@TA=25℃ | | | 1.4 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 125 | ℃/W | | 1 |
| N-ch Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS=0V , ID=250uA | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) | | 19 | 24 | mΩ | VGS=4.5V , ID=4A | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) | | 26 | 34 | mΩ | VGS=2.5V , ID=3A | 2 |
| N-ch Gate Threshold Voltage | VGS(th) | 0.5 | 0.8 | 1.2 | V | VGS=VDS , ID =250uA | 2 |
| N-ch Drain-Source Leakage Current at TJ=25℃ | IDSS | | | 1 | uA | VDS=16V , VGS=0V , TJ=25℃ | 2 |
| N-ch Drain-Source Leakage Current at TJ=55℃ | IDSS | | | 5 | uA | VDS=16V , VGS=0V , TJ=55℃ | 2 |
| N-ch Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V , VDS=0V | 2 |
| N-ch Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
| P-ch Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V , ID=-250uA | 5 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) | | 35 | 45 | mΩ | VGS=-4.5V , ID=-4A | 5 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) | | 50 | 65 | mΩ | VGS=-2.5V , ID=-3A | 5 |
| P-ch Gate Threshold Voltage | VGS(th) | -0.4 | -0.7 | -1 | V | VGS=VDS , ID =-250uA | 5 |
| P-ch Drain-Source Leakage Current at TJ=25℃ | IDSS | | | -1 | uA | VDS=-16V , VGS=0V , TJ=25℃ | 5 |
| P-ch Drain-Source Leakage Current at TJ=55℃ | IDSS | | | -5 | uA | VDS=-16V , VGS=0V , TJ=55℃ | 5 |
| P-ch Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V , VDS=0V | 5 |
| P-ch Diode Forward Voltage | VSD | | -0.81 | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 5 |
## CAD (KiCad official)
- Symbol: `HSW2004`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `hsw2004-etched.step` / `hsw2004-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsw2004.step` / `hsw2004.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590916557696544768) (8 pp, sha256 `f7cc5bd09f484ebd`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hsw2004-datasheet.pdf)