component
HSUD50N0306P
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSUD50N0306P
HXY MOSFET · MOSFETs · TO-252-2L
HSUD50N0306P from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, rated ±20 V maximum gate-source voltage with a 1.0 V to 2.5 V threshold at 250 µA, and drivable down to 4.5 V. |
| 2 | D | passive | Drain, rated 30 V drain-source voltage and 100 A continuous drain current at TC=25°C (160 A pulsed). |
| 3 | S | passive | Source, with 80 A maximum continuous body-diode source current and RDS(ON) below 5.5 mΩ at VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 3.8 | 5.5 | mΩ | VGS=10V, ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 7.5 | 9 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 1.7 | 3.4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | 80 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 160 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 100 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 57 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 27 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 23 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 160 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 115.2 | mJ | 1 | |||
| Avalanche Current | IAS | 48 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 53 | W | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 6 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 25 | ℃/W | t ≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 2.8 | ℃/W | 1 | |||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | 0.028 | V/℃ | Reference to 25℃, ID=1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | -6.16 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 22 | S | VDS=5V, ID=30A | 2 | ||
| Total Gate Charge (4.5V) | Qg | 20 | nC | VDS=15V, VGS=4.5V, ID=15A | 2 | ||
| Gate-Source Charge | Qgs | 7.6 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 7.2 | nC | 2 | |||
| Turn-On Delay Time | Td(on) | 7.8 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | ||
| Rise Time | Tr | 15 | ns | 2 | |||
| Turn-Off Delay Time | Td(off) | 37.3 | ns | 2 | |||
| Fall Time | Tf | 10.6 | ns | 2 | |||
| Input Capacitance | Ciss | 2295 | pF | VDS=15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 267 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 210 | pF | 2 | |||
| Reverse Recovery Time | trr | 14 | nS | IF=30A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 5 | nC | 2 |
CAD (KiCad official)
- Symbol:
HSUD50N0306P - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hsud50n0306p-etched.step/hsud50n0306p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsud50n0306p.step/hsud50n0306p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
76a69b38662a73b7, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSUD50N0306P
**HXY MOSFET** · MOSFETs · TO-252-2L
HSUD50N0306P from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, rated ±20 V maximum gate-source voltage with a 1.0 V to 2.5 V threshold at 250 µA, and drivable down to 4.5 V. |
| 2 | D | passive | Drain, rated 30 V drain-source voltage and 100 A continuous drain current at TC=25°C (160 A pulsed). |
| 3 | S | passive | Source, with 80 A maximum continuous body-diode source current and RDS(ON) below 5.5 mΩ at VGS=10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 3.8 | 5.5 | mΩ | VGS=10V, ID=30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 7.5 | 9 | mΩ | VGS=4.5V, ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Resistance | Rg | | 1.7 | 3.4 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS | | | 80 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 160 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | | | 100 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ | | | 57 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TA=25℃ | | | 27 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TA=70℃ | | | 23 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 160 | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 115.2 | mJ | | 1 |
| Avalanche Current | IAS | | | 48 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 53 | W | | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 6 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 62 | ℃/W | Steady State | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 25 | ℃/W | t ≤10s | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 2.8 | ℃/W | | 1 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | 0.028 | | V/℃ | Reference to 25℃, ID=1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | -6.16 | | mV/℃ | | 2 |
| Forward Transconductance | gfs | | 22 | | S | VDS=5V, ID=30A | 2 |
| Total Gate Charge (4.5V) | Qg | | 20 | | nC | VDS=15V, VGS=4.5V, ID=15A | 2 |
| Gate-Source Charge | Qgs | | 7.6 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 7.2 | | nC | | 2 |
| Turn-On Delay Time | Td(on) | | 7.8 | | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 |
| Rise Time | Tr | | 15 | | ns | | 2 |
| Turn-Off Delay Time | Td(off) | | 37.3 | | ns | | 2 |
| Fall Time | Tf | | 10.6 | | ns | | 2 |
| Input Capacitance | Ciss | | 2295 | | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 267 | | pF | | 2 |
| Reverse Transfer Capacitance | Crss | | 210 | | pF | | 2 |
| Reverse Recovery Time | trr | | 14 | | nS | IF=30A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 5 | | nC | | 2 |
## CAD (KiCad official)
- Symbol: `HSUD50N0306P`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `hsud50n0306p-etched.step` / `hsud50n0306p-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsud50n0306p.step` / `hsud50n0306p.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/hsud50n0306p-datasheet.pdf) (6 pp, sha256 `76a69b38662a73b7`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hsud50n0306p-datasheet.pdf)