component
HSU90N03
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSU90N03
HUASHUO · MOSFETs · TO-252
HSU90N03 from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rating is ±20 V, with threshold VGS(th) 1.0 to 2.5 V at ID=250uA. |
| 2 | D | passive | Drain (center lead, common with the metal tab); drain-source voltage 30 V, continuous drain current 90 A at TC=25℃, pulsed 320 A. |
| 3 | S | passive | Source; continuous source (body diode) current 90 A, pulsed 192 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 90 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=70℃ | 60 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 320 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 300 | mJ | 1 | |||
| Avalanche Current | IAS | 53.8 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 115 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 50 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 0.8 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2.8 | 3.5 | mΩ | VGS=10V , ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 4.3 | 5.5 | mΩ | VGS=4.5V , ID=15A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.4 | 2.5 | V | VGS=VDS , ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Forward Transconductance | gfs | 20 | S | VDS=5V , ID=15A | 2 | ||
| Continuous Source Current | IS | 90 | A | VG=VD=0V , Force Current | 2 | ||
| Pulsed Source Current | ISM | 192 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V , IS=1A , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSU90N03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
hsu90n03-etched.step/hsu90n03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu90n03.step/hsu90n03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
b5b420a5239f23d3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).