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HSU90N02

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSU90N02

HUASHUO · MOSFETs · TO-252-2

HSU90N02 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is limited to ±12 V, with threshold VGS(th) 0.4 V min to 1.1 V max at ID=250uA.
2 D passive Drain (exposed tab); VDS max 20 V, continuous drain current 90 A at TC=25℃ and pulsed 350 A.
3 S passive Source; continuous body-diode source current 90 A, forward voltage 1.2 V max at IS=30A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current, VGS @ 10V ID@TC=25℃ 90 A TC=25℃ 1
Continuous Drain Current, VGS @ 10V ID@TC=100℃ 59 A TC=100℃ 1
Pulsed Drain Current IDM 350 A 1
Single Pulse Avalanche Energy EAS 108 mJ 1
Total Power Dissipation PD@TC=25℃ 82 W TC=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient (Steady State) RθJA 50 ℃/W Steady State 1
Thermal Resistance Junction-Ambient RθJA 25 ℃/W t ≤10s 1
Thermal Resistance Junction-Case RθJC 1.92 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.028 V/℃ Reference to 25℃, ID=1mA 2
Static Drain-Source On-Resistance RDS(ON) 2.7 4 mΩ VGS=4.5V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 4.1 6 mΩ VGS=2.5V, ID=20A 2
Gate Threshold Voltage VGS(th) 0.4 0.7 1.1 V VGS=VDS, ID=250uA 2
VGS(th) Temperature Coefficient △VGS(th) -6.16 mV/℃ 2
Drain-Source Leakage Current IDSS 1 uA VDS=20V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=20V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 2
Continuous Source Current IS 90 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 360 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=30A, TJ=25℃ 2
Total Gate Charge (4.5V) Qg 50 nC VDS=15V, VGS=4.5V, ID=18A 2
Gate-Source Charge Qgs 3.9 nC 2
Gate-Drain Charge Qgd 22 nC 2
Turn-On Delay Time Td(on) 10 ns VDD=15V, VGS=4.5V, RG=1.8, ID=15A 2
Rise Time Tr 33 ns 2
Turn-Off Delay Time Td(off) 68 ns 2
Fall Time Tf 52 ns 2
Input Capacitance Ciss 3200 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 430 pF 2
Reverse Transfer Capacitance Crss 414 pF 2
Reverse Recovery Time trr 24 nS IF=30A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 12 nC 2

CAD (KiCad official)

  • Symbol: HSU90N02
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: hsu90n02-etched.step / hsu90n02-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu90n02.step / hsu90n02.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (7 pp, sha256 fb53b39bf570bbe2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF