Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

HSU8048

HUASHUO · MOSFETs · TO-252

HSU8048 from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) 1.2 V min to 2.3 V max at ID=250uA.
2 D passive Drain, shown as the center lead and the exposed tab on the TO-252 outline; VDS rated 80 V and continuous ID 48 A at TC=25℃ (package limited).
3 S passive Source; the continuous source current IS is 48 A max.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4.3 6.5 mΩ VGS=10V , ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 6.3 8.5 mΩ VGS=4.5V , ID=20A 2
Gate Threshold Voltage VGS(th) 1.2 1.7 2.3 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=64V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=64V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 48 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 0.77 1 V VGS=0V , TJ=25℃ 2
Drain-Source Voltage VDS 80 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 48 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 42.5 A VGS @ 10V 1
Pulsed Drain Current IDM 170 A 1
Single Pulse Avalanche Energy EAS 57.8 mJ VDD=25V,VGS=10V,L=0.1mH,IAS=34A 1
Avalanche Current IAS 34 A 1
Total Power Dissipation PD@TC=25℃ 56 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 2.2 ℃/W 1

CAD (KiCad official)

  • Symbol: HSU8048
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: hsu8048-etched.step / hsu8048-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu8048.step / hsu8048.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 01299ecc409bf289, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF