# HSU6901

**HUASHUO** · MOSFETs · TO-252-4

HSU6901 from HUASHUO, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (60V, 23A, 32mΩ max RDS(ON) at VGS=10V). |
| 2 | G1 | input | Gate of the N-channel MOSFET, VGS rated ±20V with 1.2V to 2.5V threshold. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-60V, -18A, 70mΩ max RDS(ON) at VGS=-10V). |
| 4 | G2 | input | Gate of the P-channel MOSFET, VGS rated ±20V with -1.2V to -2.5V threshold. |
| 5 | D1/D2 | passive | Exposed tab, common drain of the N-channel (D1) and P-channel (D2) MOSFETs, tied together internally. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| P-ch Drain-Source Voltage | VDS |  |  | -60 | V |  | 1 |
| N-ch Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| P-ch Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| N-ch Continuous Drain Current | ID@TC=25℃ |  |  | 23 | A | VGS @ 10V | 1 |
| P-ch Continuous Drain Current | ID@TC=25℃ |  |  | -18 | A | VGS @ 10V | 1 |
| N-ch Continuous Drain Current | ID@TC=100℃ |  |  | 15 | A | VGS @ 10V | 1 |
| P-ch Continuous Drain Current | ID@TC=100℃ |  |  | -11 | A | VGS @ 10V | 1 |
| N-ch Continuous Drain Current | ID@TA=25℃ |  |  | 5.6 | A | VGS @ 10V | 1 |
| P-ch Continuous Drain Current | ID@TA=25℃ |  |  | -4.3 | A | VGS @ 10V | 1 |
| N-ch Continuous Drain Current | ID@TA=70℃ |  |  | 4.5 | A | VGS @ 10V | 1 |
| P-ch Continuous Drain Current | ID@TA=70℃ |  |  | -3.5 | A | VGS @ 10V | 1 |
| N-ch Pulsed Drain Current | IDM |  |  | 46 | A |  | 1 |
| P-ch Pulsed Drain Current | IDM |  |  | -36 | A |  | 1 |
| N-ch Single Pulse Avalanche Energy | EAS |  |  | 34.5 | mJ |  | 1 |
| P-ch Single Pulse Avalanche Energy | EAS |  |  | 51.2 | mJ |  | 1 |
| N-ch Avalanche Current | IAS |  |  | 22.6 | A |  | 1 |
| P-ch Avalanche Current | IAS |  |  | -26.6 | A |  | 1 |
| N-ch Total Power Dissipation | PD@TC=25℃ |  |  | 34.7 | W |  | 1 |
| P-ch Total Power Dissipation | PD@TC=25℃ |  |  | 34.7 | W |  | 1 |
| N-ch Total Power Dissipation | PD@TA=25℃ |  |  | 2 | W |  | 1 |
| P-ch Total Power Dissipation | PD@TA=25℃ |  |  | 2 | W |  | 1 |
| Storage Temperature Range (N-ch and P-ch) | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range (N-ch and P-ch) | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 3.6 | ℃/W | Note 1: surface mounted on 1 inch² FR-4 board, 2OZ copper | 1 |
| N-ch Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 32 | mΩ | VGS=10V, ID=15A | 2 |
| N-ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 38 | mΩ | VGS=4.5V, ID=10A | 2 |
| N-ch Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| N-ch Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 |
| N-ch Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 |
| N-ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| N-ch Continuous Source Current | IS |  |  | 23 | A | VG=VD=0V, Force Current | 2 |
| N-ch Pulsed Source Current | ISM |  |  | 46 | A |  | 2 |
| N-ch Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| P-ch Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V, ID=-250uA | 3 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 70 | mΩ | VGS=-10V, ID=-12A | 3 |
| P-ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 105 | mΩ | VGS=-4.5V, ID=-8A | 3 |
| P-ch Gate Threshold Voltage | VGS(th) | -1.2 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| P-ch Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 3 |
| P-ch Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 3 |
| P-ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| P-ch Continuous Source Current | IS |  |  | -18 | A | VG=VD=0V, Force Current | 3 |
| P-ch Pulsed Source Current | ISM |  |  | -36 | A |  | 3 |
| P-ch Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `HSU6901`
- Footprint: `Package_TO_SOT_SMD:TO-252-4`
- 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files: `hsu6901-etched.step` / `hsu6901-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu6901.step` / `hsu6901.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757800253007912960) (9 pp, sha256 `8f46295701f4b3b9`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsu6901-datasheet.pdf)