# HSU6115

**HUASHUO** · MOSFETs · TO-252-2

HSU6115 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated ±20 V, with threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA. |
| 2 | D | passive | Drain (exposed tab); drain-source voltage rated -60 V, continuous drain current -35 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current up to -35 A and pulsed -70 A through the body diode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current, -VGS @ -10V (TC=25℃) | ID@TC=25℃ | -35 |  |  | A |  | 1 |
| Continuous Drain Current, -VGS @ -10V (TC=100℃) | ID@TC=100℃ | -27 |  |  | A |  | 1 |
| Pulsed Drain Current | IDM | -70 |  |  | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 113 | mJ |  | 1 |
| Avalanche Current | IAS |  |  | 47.6 | A |  | 1 |
| Total Power Dissipation (TC=25℃) | PD@TC=25℃ |  |  | 52.1 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62 | ℃/W | Surface mounted on 1 inch FR-4 board with 2OZ copper (note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 2.4 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance (VGS=-10V) | RDS(ON) |  |  | 25 | mΩ | VGS=-10V, ID=-18A | 2 |
| Static Drain-Source On-Resistance (VGS=-4.5V) | RDS(ON) |  |  | 33 | mΩ | VGS=-4.5V, ID=-12A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current (TJ=25℃) | IDSS |  |  | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current (TJ=55℃) | IDSS |  |  | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | -35 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -70 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSU6115`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files: `hsu6115-etched.step` / `hsu6115-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu6115.step` / `hsu6115.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757799191228243968) (6 pp, sha256 `d9752250949eb8c0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsu6115-datasheet.pdf)