component

HSU6105

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshsu6105factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 14d ago
viewers hsu6105: viewers · Ray 14d ago
hsu6105-etched.glb Publish 0.1.0 · Ray 14d ago
hsu6105-etched.step hsu6105: factory component page (tier=lcsc) · Ray 14d ago
hsu6105-hero.glb hsu6105: hero GLB from the etched model (keeps the MPN mark) · Ray 14d ago
hsu6105-hero.overlay.json Publish 0.1.0 · Ray 14d ago
hsu6105.glb Publish 0.1.0 · Ray 14d ago
hsu6105.kicad_mod Publish 0.1.0 · Ray 14d ago
hsu6105.kicad_sym Publish 0.1.0 · Ray 14d ago
hsu6105.lbr Publish 0.1.0 · Ray 14d ago
hsu6105.step Publish 0.1.0 · Ray 14d ago
package.json Publish 0.1.0 · Ray 14d ago
page.json Set visibility: public · Ray 14d ago
README.md Publish 0.1.0 · Ray 14d ago

HSU6105

HUASHUO · MOSFETs · TO-252-2

HSU6105 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold -1.0 to -2.5 V at ID=-250uA.
2 D passive Drain (center lead removed in TO-252-2, connected to the tab); drain-source voltage -60 V, continuous current -40 A at TC=25℃.
3 S passive Source; body diode continuous current up to -40 A with forward voltage max -1.2 V at IS=-15A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -40 A TC=25℃, -VGS @ -10V 1
Continuous Drain Current ID -25 A TC=100℃, -VGS @ -10V 1
Pulsed Drain Current IDM -160 A 1
Single Pulse Avalanche Energy EAS 196 mJ 1
Maximum Power Dissipation PD 71 W TC=25℃ 1
Maximum Power Dissipation PD 28 W TC=100℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Case RθJC 1.75 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 24 28 mΩ VGS=-10V, ID=-15A, TJ=25℃ 2
Static Drain-Source On-Resistance RDS(ON) 30.5 40.5 mΩ VGS=-4.5V, ID=-10A, TJ=25℃ 2
Gate Threshold Voltage VGS(th) -1 -1.8 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-60V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -100 uA VDS=-60V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Source-Drain Current (Body Diode) IS -40 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-15A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSU6105
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: hsu6105-etched.step / hsu6105-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu6105.step / hsu6105.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 68ad186fc0ac42c5, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF