# HSU60P02

**HUASHUO** · MOSFETs · TO-252

HSU60P02 from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; P-channel gate-source voltage limited to ±12 V absolute maximum, with threshold of -0.5 to -1.0 V. |
| 2 | D | passive | Drain, also the exposed tab; drain-source voltage -20 V and continuous drain current -60 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current is -60 A and pulsed source current -240 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current (TC=25℃) | ID@TC=25℃ | -60 |  |  | A | VGS @ -4.5V | 1 |
| Continuous Drain Current (TC=100℃) | ID@TC=100℃ | -39 |  |  | A | VGS @ -4.5V | 1 |
| Pulsed Drain Current | IDM | -240 |  |  | A |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 70 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 2.1 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance (VGS=-4.5V) | RDS(ON) |  | 4.1 | 5.5 | mΩ | VGS=-4.5V, ID=-15A | 2 |
| Static Drain-Source On-Resistance (VGS=-2.5V) | RDS(ON) |  | 6 | 8.4 | mΩ | VGS=-2.5V, ID=-12A | 2 |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.7 | -1 | V | VGS=VDS, ID=-250uA | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±8V, VDS=0V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=-20V, VGS=0V, TJ=25℃ | 2 |
| Continuous Source Current | IS |  |  | -60 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -240 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSU60P02`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `hsu60p02-etched.step` / `hsu60p02-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu60p02.step` / `hsu60p02.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757800462710394880) (6 pp, sha256 `2f2e06a5a30971ba`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsu60p02-datasheet.pdf)