main
History Download
Ray Publish 0.1.0 2fc1a2a 23d ago

HSU6006

HUASHUO · MOSFETs · TO-252-2

HSU6006 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the datasheet rates gate-source voltage at ±20 V, with a threshold of 1.2 V min to 2.5 V max at VGS=VDS, ID=250uA.
2 D passive Drain, which is the exposed tab (the middle lead is cut off); rated 60 V drain-source and 35 A continuous at TC=25℃.
3 S passive Source; the continuous source current is 35 A and the pulsed source current is 80 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 35 A VGS @ 10V, TC=25℃ 1
Continuous Drain Current ID 22 A VGS @ 10V, TC=100℃ 1
Continuous Drain Current ID 7.4 A VGS @ 10V, TA=25℃ 1
Continuous Drain Current ID 6 A VGS @ 10V, TA=70℃ 1
Pulsed Drain Current IDM 80 A 1
Single Pulse Avalanche Energy EAS 39.2 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=28A 1
Avalanche Current IAS 28 A 1
Total Power Dissipation PD 45 W TC=25℃ 1
Total Power Dissipation PD 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (Note 1) 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 20 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 24 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 35 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 80 A 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=A, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.057 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -5.68 mV/℃ 2
Forward Transconductance gfs 45 S VDS=5V, ID=15A 2
Gate Resistance Rg 1.7 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 19.3 nC VDS=48V, VGS=4.5V, ID=15A 2
Gate-Source Charge Qgs 7.1 nC 2
Gate-Drain Charge Qgd 7.6 nC 2
Turn-On Delay Time Td(on) 7.2 ns VDD=30V, VGS=10V, RG=3.3, ID=15A 2
Rise Time Tr 50 ns 2
Turn-Off Delay Time Td(off) 36.4 ns 2
Fall Time Tf 7.6 ns 2
Input Capacitance Ciss 2423 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 145 pF 2
Reverse Transfer Capacitance Crss 97 pF 2
Reverse Recovery Time trr 16.3 nS IF=15A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 11 nC 2

CAD (KiCad official)

  • Symbol: HSU6006
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: hsu6006-etched.step / hsu6006-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu6006.step / hsu6006.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 4178abfd23ebdb42, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF