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HSU6004

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSU6004

HUASHUO · MOSFETs · TO-252-2

HSU6004 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage rating is ±20 V, with VGS(th) of 1.2 V min to 2.5 V max at ID=250uA.
2 D passive Drain, shown as the tab and the short center stub; VDS is 60 V and continuous drain current is 23 A at TC=25℃.
3 S passive Source; body-diode continuous source current is 23 A max with VSD of 1.2 V max at IS=1A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 23 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 15 A VGS @ 10V 1
Continuous Drain Current ID@TA=25℃ 5.6 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 4.5 A VGS @ 10V 1
Pulsed Drain Current IDM 46 A 1
Single Pulse Avalanche Energy EAS 25.5 mJ 1
Avalanche Current IAS 22.6 A 1
Total Power Dissipation PD@TC=25℃ 34.7 W 1
Total Power Dissipation PD@TA=25℃ 2 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 25 30 mΩ VGS=10V, ID=15A 2
Static Drain-Source On-Resistance RDS(ON) 30 38 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 23 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 46 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSU6004
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: hsu6004-etched.step / hsu6004-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu6004.step / hsu6004.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 4ce0695f8ba5b24d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF