component

HSU50N06

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorhsu50n06factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 3h ago
viewers hsu50n06: viewers · Ray 3h ago
hsu50n06-etched.glb Publish 0.1.0 · Ray 3h ago
hsu50n06-etched.step hsu50n06: factory component page (tier=lcsc) · Ray 3h ago
hsu50n06-hero.glb hsu50n06: hero GLB from the etched model (keeps the MPN mark) · Ray 3h ago
hsu50n06-hero.overlay.json Publish 0.1.0 · Ray 3h ago
hsu50n06.glb Publish 0.1.0 · Ray 3h ago
hsu50n06.kicad_mod Publish 0.1.0 · Ray 3h ago
hsu50n06.kicad_sym Publish 0.1.0 · Ray 3h ago
hsu50n06.lbr Publish 0.1.0 · Ray 3h ago
hsu50n06.step Publish 0.1.0 · Ray 3h ago
package.json Publish 0.1.0 · Ray 3h ago
page.json Set visibility: public · Ray 3h ago
README.md Publish 0.1.0 · Ray 3h ago

HSU50N06

HUASHUO · MOSFETs · TO-252-2

HSU50N06 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with VGS rated ±20 V and a gate threshold of 1.2 V min to 2.5 V max at VGS=VDS, ID=250uA.
2 D passive Drain, which is the mounting tab and the shortened centre stub; rated for VDS 60 V and continuous ID 55 A at TC=25℃.
3 S passive Source; carries up to 55 A continuous, and the body diode continuous source current IS is 55 A max.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252-2
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 55 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 30 A VGS @ 10V 1
Pulsed Drain Current IDM 90 A 1
Single Pulse Avalanche Energy EAS 39.2 mJ VDD=25V,VGS=10V,L=0.1mH,IAS=38A 1
Avalanche Current IAS 38 A 1
Total Power Dissipation PD@TC=25℃ 45 W 1
Total Power Dissipation PD@TA=25℃ 2 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 2.8 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 11 16 mΩ VGS=10V , ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 16 20 mΩ VGS=4.5V , ID=10A 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 55 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 90 A 2
Diode Forward Voltage VSD 1 V VGS=0V , IS=A , TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.057 V/℃ Reference to 25℃ , ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -5.68 mV/℃ 2
Forward Transconductance gfs 45 S VDS=5V , ID=15A 2
Gate Resistance Rg 1.7 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (4.5V) Qg 23 nC VDS=48V , VGS=4.5V , ID=15A 2
Gate-Source Charge Qgs 7.1 nC VDS=48V , VGS=4.5V , ID=15A 2
Gate-Drain Charge Qgd 7.6 nC VDS=48V , VGS=4.5V , ID=15A 2
Turn-On Delay Time Td(on) 7.2 ns VDD=30V , VGS=10V , RG=3.3, ID=15A 2
Rise Time Tr 50 ns VDD=30V , VGS=10V , RG=3.3, ID=15A 2
Turn-Off Delay Time Td(off) 36.4 ns VDD=30V , VGS=10V , RG=3.3, ID=15A 2
Fall Time Tf 7.6 ns VDD=30V , VGS=10V , RG=3.3, ID=15A 2
Input Capacitance Ciss 2823 pF VDS=15V , VGS=0V , f=1MHz 2
Output Capacitance Coss 155 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 107 pF VDS=15V , VGS=0V , f=1MHz 2
Reverse Recovery Time trr 16.3 nS IF=15A , dI/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 11 nC IF=15A , dI/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSU50N06
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: hsu50n06-etched.step / hsu50n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu50n06.step / hsu50n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 cf850908ca96cc7e, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF