# HSU4903

**HUASHUO** · MOSFETs · TO-252-4

HSU4903 from HUASHUO, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (40V, 30mΩ, 23A). |
| 2 | G1 | input | Gate of the N-channel MOSFET, rated ±20V gate-source with VGS(th) 1.0 to 2.5V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-40V, 45mΩ, -20A). |
| 4 | G2 | input | Gate of the P-channel MOSFET, rated ±20V gate-source with VGS(th) -1.0 to -2.5V. |
| 5 | D1/D2 | passive | Exposed tab, common drain of both the N-channel (D1) and P-channel (D2) MOSFETs, tied together internally. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Voltage | VDS |  |  | 40 | V |  | 1 |
| P-Ch Drain-Source Voltage | VDS | -40 |  |  | V |  | 1 |
| N-Ch Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| P-Ch Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| N-Ch Continuous Drain Current | ID@TC=25℃ |  |  | 23 | A | VGS @ 10V | 1 |
| P-Ch Continuous Drain Current | ID@TC=25℃ | -20 |  |  | A | VGS @ 10V | 1 |
| N-Ch Continuous Drain Current | ID@TC=100℃ |  |  | 18 | A | VGS @ 10V | 1 |
| P-Ch Continuous Drain Current | ID@TC=100℃ | -16 |  |  | A | VGS @ 10V | 1 |
| N-Ch Pulsed Drain Current | IDM |  |  | 46 | A | Pulse width ≤300us, duty cycle ≤2% | 1 |
| P-Ch Pulsed Drain Current | IDM | -40 |  |  | A | Pulse width ≤300us, duty cycle ≤2% | 1 |
| N-Ch Single Pulse Avalanche Energy | EAS |  |  | 28 | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A | 1 |
| P-Ch Single Pulse Avalanche Energy | EAS |  |  | 66 | mJ | VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A | 1 |
| N-Ch Avalanche Current | IAS |  |  | 17.8 | A |  | 1 |
| P-Ch Avalanche Current | IAS | -27.2 |  |  | A |  | 1 |
| N-Ch Total Power Dissipation | PD@TC=25℃ |  |  | 25 | W | TC=25℃ | 1 |
| P-Ch Total Power Dissipation | PD@TC=25℃ |  |  | 31.3 | W | TC=25℃ | 1 |
| N-Ch Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| P-Ch Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| N-Ch Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| P-Ch Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62 | ℃/W | Surface mounted on 1 inch2 FR-4 board, 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 5 | ℃/W |  | 1 |
| N-Ch Drain-Source Breakdown Voltage | BVDSS | 40 |  |  | V | VGS=0V, ID=250uA | 2 |
| N-Ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 30 | mΩ | VGS=10V, ID=12A | 2 |
| N-Ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 50 | mΩ | VGS=4.5V, ID=10A | 2 |
| N-Ch Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| N-Ch Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=32V, VGS=0V, TJ=25℃ | 2 |
| N-Ch Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=32V, VGS=0V, TJ=55℃ | 2 |
| N-Ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| N-Ch Gate Resistance | Rg |  | 2.6 | 5.2 |  | VDS=0V, VGS=0V, f=1MHz | 2 |
| N-Ch Continuous Source Current | IS |  |  | 23 | A | VG=VD=0V, Force Current | 2 |
| N-Ch Pulsed Source Current | ISM |  |  | 46 | A |  | 2 |
| N-Ch Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| P-Ch Drain-Source Breakdown Voltage | BVDSS | -40 |  |  | V | VGS=0V, ID=-250uA | 3 |
| P-Ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 45 | mΩ | VGS=-10V, ID=-8A | 3 |
| P-Ch Static Drain-Source On-Resistance | RDS(ON) |  |  | 70 | mΩ | VGS=-4.5V, ID=-4A | 3 |
| P-Ch Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| P-Ch Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 3 |
| P-Ch Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 3 |
| P-Ch Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| P-Ch Gate Resistance | Rg |  | 13 | 16 |  | VDS=0V, VGS=0V, f=1MHz | 3 |
| P-Ch Continuous Source Current | IS |  |  | -20 | A | VG=VD=0V, Force Current | 3 |
| P-Ch Pulsed Source Current | ISM |  |  | -40 | A |  | 3 |
| P-Ch Diode Forward Voltage | VSD |  |  | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `HSU4903`
- Footprint: `Package_TO_SOT_SMD:TO-252-4`
- 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files: `hsu4903-etched.step` / `hsu4903-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu4903.step` / `hsu4903.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757799216808628224) (9 pp, sha256 `009532751a7c5ca7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsu4903-datasheet.pdf)