component
HSU4119
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSU4119
HUASHUO · MOSFETs · TO-252
HSU4119 from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) between -1.0 and -2.5 V. |
| 2 | D | passive | Drain, connected to the exposed tab; drain-source voltage -40 V and continuous drain current -120 A (package limited). |
| 3 | S | passive | Source; continuous source (body diode) current is -120 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -120 | A | VGS @ -10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -90 | A | VGS @ -10V, TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -480 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 1250 | mJ | VDD=-40V, VGS=-10V, L=0.5mH, IAS=-70A (note 3) | 1 | ||
| Avalanche Current | IAS | -70 | A | 1 | |||
| Total Power Dissipation | PD | 135 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 20 | ℃/W | t≦10S | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-case | RθJC | 1.8 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 3.5 | 4 | mΩ | VGS=-10V, ID=-30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 4.5 | 5.3 | mΩ | VGS=-4.5V, ID=-20A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-40V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -100 | uA | VDS=-40V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -120 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-20A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSU4119 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
hsu4119-etched.step/hsu4119-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu4119.step/hsu4119.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (5 pp, sha256
e051135ba6aebc4a, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).