component
HSU4113
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSU4113
HUASHUO · MOSFETs · TO-252-2
HSU4113 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rating is ±20 V, with threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA. |
| 2 | D | passive | Drain, connected to the exposed tab; drain-source voltage -40 V, continuous drain current -23 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is -23 A and pulsed source current -46 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | -23 | A | -VGS @ -10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -18 | A | -VGS @ -10V, TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -46 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 37 | mJ | VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A | 1 | ||
| Avalanche Current | IAS | -27.2 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 31.3 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | Surface mounted on 1 inch FR-4 board, 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 4 | ℃/W | Note 1 (surface mounted on 1 inch FR-4 board, 2OZ copper) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 40 | mΩ | VGS=-10V, ID=-18A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 65 | mΩ | VGS=-4.5V, ID=-12A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -23 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -46 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSU4113 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
hsu4113-etched.step/hsu4113-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu4113.step/hsu4113.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
959a221edf9ce195, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSU4113
**HUASHUO** · MOSFETs · TO-252-2
HSU4113 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rating is ±20 V, with threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA. |
| 2 | D | passive | Drain, connected to the exposed tab; drain-source voltage -40 V, continuous drain current -23 A at TC=25℃. |
| 3 | S | passive | Source; continuous source (body diode) current is -23 A and pulsed source current -46 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | -23 | | | A | -VGS @ -10V, TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=100℃ | -18 | | | A | -VGS @ -10V, TC=100℃ | 1 |
| Pulsed Drain Current | IDM | -46 | | | A | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 37 | mJ | VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A | 1 |
| Avalanche Current | IAS | -27.2 | | | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 31.3 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 62 | ℃/W | Surface mounted on 1 inch FR-4 board, 2OZ copper (note 1) | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 4 | ℃/W | Note 1 (surface mounted on 1 inch FR-4 board, 2OZ copper) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 40 | mΩ | VGS=-10V, ID=-18A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 65 | mΩ | VGS=-4.5V, ID=-12A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=-32V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=-32V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | -23 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -46 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `HSU4113`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files: `hsu4113-etched.step` / `hsu4113-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu4113.step` / `hsu4113.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757800228429021184) (6 pp, sha256 `959a221edf9ce195`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hsu4113-datasheet.pdf)