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HSU4103

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSU4103

HUASHUO · MOSFETs · TO-252-2

HSU4103 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of -1.0 to -2.5 V at ID=-250uA.
2 D passive Drain (center lead stub and exposed mounting tab); drain-source voltage -40 V, continuous drain current -27 A at TC=25℃.
3 S passive Source; continuous source current is -27 A and pulsed source current is -54 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V 1
Gate-Source Voltage VGS -20 20 V Printed as ±20 V 1
Continuous Drain Current ID -27 A -VGS @ -10V, TC=25℃ 1
Continuous Drain Current ID -21 A -VGS @ -10V, TC=100℃ 1
Pulsed Drain Current IDM -54 A 1
Single Pulse Avalanche Energy EAS 40.9 mJ VDD=-25V, VGS=-10V, L=0.1mH, IAS=-28.6A (note 3) 1
Avalanche Current IAS -28.6 A 1
Total Power Dissipation PD 35 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Surface mounted on 1 inch FR-4 board with 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W Note 1 1
Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 32 mΩ VGS=-10V, ID=-8A 2
Static Drain-Source On-Resistance RDS(ON) 46 mΩ VGS=-4.5V, ID=-4A 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=-32V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=-32V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -27 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -54 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ -0.02 V/℃ Reference to 25℃, ID=-1mA 2
VGS(th) Temperature Coefficient △VGS(th) 3.72 V/℃ 2
Forward Transconductance gfs 10.7 S VDS=-5V, ID=-8A 2
Total Gate Charge (-4.5V) Qg 11.5 nC VDS=-15V, VGS=-4.5V, ID=-1A 2
Gate-Source Charge Qgs 3.5 nC 2
Gate-Drain Charge Qgd 3.3 nC 2
Turn-On Delay Time Td(on) 22 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-1A 2
Rise Time Tr 15.7 ns 2
Turn-Off Delay Time Td(off) 59 ns 2
Fall Time Tf 5.5 ns 2
Input Capacitance Ciss 1415 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 134 pF 2
Reverse Transfer Capacitance Crss 102 pF 2

CAD (KiCad official)

  • Symbol: HSU4103
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: hsu4103-etched.step / hsu4103-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu4103.step / hsu4103.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 8e2d0ee29fe75334, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF