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Ray Publish 0.1.0 9e83039 17d ago

HSU4004

HUASHUO · MOSFETs · TO-252-2

HSU4004 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the datasheet gives a Gate-Source voltage rating of ±20 V and a threshold of 1.0 V min to 2.5 V max at 250 uA.
2 D passive Drain, which is the exposed tab of the package; the datasheet gives a Drain-Source voltage rating of 40 V and a continuous drain current of 42 A at TC=25℃.
3 S passive Source; the datasheet gives a continuous source (body diode) current of 42 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 42 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 26 A VGS @ 10V 1
Continuous Drain Current ID@TA=25℃ 10 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 8 A VGS @ 10V 1
Pulsed Drain Current IDM 100 A 1
Single Pulse Avalanche Energy EAS 31 mJ 1
Avalanche Current IAS 25 A 1
Total Power Dissipation PD@TC=25℃ 34.7 W 1
Total Power Dissipation PD@TA=25℃ 2 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 9.5 11.5 mΩ VGS=10V, ID=12A 2
Static Drain-Source On-Resistance RDS(ON) 13.5 16.5 mΩ VGS=4.5V, ID=8A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=32V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=32V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 2.1 4.2 VDS=0V, VGS=0V, f=1MHz 2
Continuous Source Current IS 42 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 100 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSU4004
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: hsu4004-etched.step / hsu4004-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu4004.step / hsu4004.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 3a55c685dd738fc3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF