component
HSU3119
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| hsu3119-etched.glb | 7d ago |
| hsu3119-etched.step | 7d ago |
| hsu3119-hero.glb | 7d ago |
| hsu3119-hero.overlay.json | 7d ago |
| hsu3119.glb | 7d ago |
| hsu3119.kicad_mod | 7d ago |
| hsu3119.kicad_sym | 7d ago |
| hsu3119.lbr | 7d ago |
| hsu3119.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
HSU3119
HUASHUO · MOSFETs · TO-252-2L
HSU3119 from HUASHUO, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with VGS rated ±20 V and threshold of -1.0 to -2.5 V at ID=-250uA. |
| 2 | D | passive | Drain, connected to the exposed tab; VDS rated -30 V and continuous drain current -130 A (package limited) at TC=25℃. |
| 3 | S | passive | Source; body-diode continuous source current rated -130 A with forward voltage max -1.2 V at IS=-20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 3 | mΩ | VGS=-10V, ID=-30A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4.2 | mΩ | VGS=-4.5V, ID=-20A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-30V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -100 | uA | VDS=-30V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-20A, TJ=25℃ | 2 | ||
| Continuous Source Current | IS | -130 | A | VG=VD=0V, Force Current | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -130 | A | VGS @ -10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -81 | A | VGS @ -10V, TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -510 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 1050 | mJ | 1 | |||
| Avalanche Current | IAS | -75 | A | 1 | |||
| Total Power Dissipation | PD | 135 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 20 | ℃/W | t≦10S | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 60 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-case | RθJC | 1.8 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HSU3119 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hsu3119-etched.step/hsu3119-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu3119.step/hsu3119.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (5 pp, sha256
5922e330f7937210, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).