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HSU3018B

Public Made by Adom

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HUASHUO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

HSU3018B

HUASHUO · MOSFETs · TO-252

HSU3018B from HUASHUO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the left lead in the TO252 pin configuration drawing, with VGS rated ±20 V maximum and threshold 1.2 to 2.5 V at ID=250uA.
2 D passive Drain; the drawing labels D on the mounting tab, with VDS rated 30 V and continuous ID 110 A at TC=25℃ (package limited).
3 S passive Source; the right lead in the TO252 pin configuration drawing, with continuous source current IS of 70 A maximum.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2 2.4 mΩ VGS=10V, ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 2.6 3.2 mΩ VGS=4.5V, ID=15A 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current (TJ=25℃) IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (TJ=55℃) IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 70 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 110 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 54 A TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM 280 A 1
Single Pulse Avalanche Energy EAS 180 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=60A 1
Avalanche Current IAS 60 A 1
Total Power Dissipation PD@TC=25℃ 60 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Surface mounted on 1 inch FR-4 board with 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 2 ℃/W Surface mounted on 1 inch FR-4 board with 2OZ copper (note 1) 1

CAD (KiCad official)

  • Symbol: HSU3018B
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: hsu3018b-etched.step / hsu3018b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu3018b.step / hsu3018b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 39371060fec67f42, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF