# HSU3016

**HUASHUO** · MOSFETs · TO-252-2

HSU3016 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rating ±20 V, threshold VGS(th) 1.0 to 2.5 V at VDS=VGS, ID=250uA. |
| 2 | D | passive | Drain, connected to the exposed tab (center lead position); VDS rating 30 V, continuous drain current 96 A at TA=25℃. |
| 3 | S | passive | Source; continuous source current IS 96 A, pulsed source current ISM 192 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TA=25℃ |  |  | 96 | A | VGS @ 10V, TA=25℃ | 1 |
| Continuous Drain Current | ID@TA=70℃ |  |  | 68 | A | VGS @ 10V, TA=70℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 192 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 144.7 | mJ |  | 1 |
| Avalanche Current | IAS |  |  | 53.8 | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 62 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 85 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 24 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 2.5 | 3 | mΩ | VGS=10V, ID=30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 4 | 5 | mΩ | VGS=4.5V, ID=15A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Diode Forward Voltage | VSD |  |  | 1 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Continuous Source Current | IS |  |  | 96 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 192 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `HSU3016`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files: `hsu3016-etched.step` / `hsu3016-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu3016.step` / `hsu3016.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757800009439944704) (6 pp, sha256 `02ad8274c6419fdd`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsu3016-datasheet.pdf)