component
HSU28N15
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| hsu28n15-etched.glb | 7d ago |
| hsu28n15-etched.step | 7d ago |
| hsu28n15-hero.glb | 7d ago |
| hsu28n15-hero.overlay.json | 7d ago |
| hsu28n15.glb | 7d ago |
| hsu28n15.kicad_mod | 7d ago |
| hsu28n15.kicad_sym | 7d ago |
| hsu28n15.lbr | 7d ago |
| hsu28n15.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
HSU28N15
HUASHUO · MOSFETs · TO-252-2
HSU28N15 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, rated VGS ±20 V with threshold VGS(th) 1.2 V min to 2.5 V max at 250 uA. |
| 2 | D | passive | Drain (also the exposed tab); rated VDS 150 V and ID 30 A continuous at TC=25°C, 60 A pulsed. |
| 3 | S | passive | Source; continuous body-diode source current IS up to 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 30 | A | VGS @ 10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 22 | A | VGS @ 10V, TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 60 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 216 | mJ | 1 | |||
| Avalanche Current | IAS | 38 | A | 1 | |||
| Total Power Dissipation | PD | 115 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 55 | ℃/W | Surface mounted on 1 inch² FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.3 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 35 | 46 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 37 | 50 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=120V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=120V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 30 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSU28N15 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
hsu28n15-etched.step/hsu28n15-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu28n15.step/hsu28n15.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
fac26f995a70c7da, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).