component
HSU20N15A
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| hsu20n15a-etched.glb | 23d ago |
| hsu20n15a-etched.step | 23d ago |
| hsu20n15a-hero.glb | 23d ago |
| hsu20n15a-hero.overlay.json | 23d ago |
| hsu20n15a.glb | 23d ago |
| hsu20n15a.kicad_mod | 23d ago |
| hsu20n15a.kicad_sym | 23d ago |
| hsu20n15a.lbr | 23d ago |
| hsu20n15a.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
HSU20N15A
HUASHUO · MOSFETs · TO-252-2
HSU20N15A from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage rated ±20 V, threshold VGS(th) 2 V min to 4 V max at ID=250uA. |
| 2 | D | passive | Drain, shown as the center lead and the exposed tab; drain-source voltage rated 150 V, continuous drain current 23 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current IS up to 20 A (body diode), pulsed drain current 60 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V , ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 47 | 56 | mΩ | VGS=10V , ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 2.9 | 4 | V | VGS=VDS , ID =250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=120V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=120V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | 20 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 23 | A | VGS @ 10V, TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 16 | A | VGS @ 10V, TC=100℃ | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 4.5 | A | VGS @ 10V, TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 3.8 | A | VGS @ 10V, TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 60 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 72.6 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 2.7 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 55 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HSU20N15A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
hsu20n15a-etched.step/hsu20n15a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu20n15a.step/hsu20n15a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
46999a6d16226a2f, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).