component
HSU15810C
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| hsu15810c-etched.glb | 13d ago |
| hsu15810c-etched.step | 13d ago |
| hsu15810c-hero.glb | 13d ago |
| hsu15810c-hero.overlay.json | 13d ago |
| hsu15810c.glb | 13d ago |
| hsu15810c.kicad_mod | 13d ago |
| hsu15810c.kicad_sym | 13d ago |
| hsu15810c.lbr | 13d ago |
| hsu15810c.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
HSU15810C
HUASHUO · MOSFETs · TO-252-2L
HSU15810C from HUASHUO, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and threshold 2.0 to 4.0 V at ID=250uA. |
| 2 | D | passive | Drain (exposed tab, and the shortened middle lead stub); VDS rated 100 V and continuous ID 112 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current up to 112 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 3.9 | 4.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=100V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=100V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 112 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, IS=50A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 112 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 70 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 250 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 702 | mJ | 1 | |||
| Avalanche Current | IAS | 53 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 104 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.2 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
HSU15810C - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hsu15810c-etched.step/hsu15810c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu15810c.step/hsu15810c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
48127ab8f1a681a3, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).