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HSU12P10

Public Made by Adom

by adom

HUASHUO MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSU12P10

HUASHUO · MOSFETs · TO-252-2

HSU12P10 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the pin config drawing labels G on the left lead, with gate-source voltage limited to ±20 V and threshold -1.2 to -3.0 V.
2 D passive Drain, the center stub and the metal tab, with drain-source voltage rated at -100 V and continuous current of -12 A at TC=25℃.
3 S passive Source; the pin config drawing labels S on the right lead.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -12 A ID@TC=25℃; VGS @ -10V 1
Continuous Drain Current ID -6.8 A ID@TC=100℃; VGS @ -10V 1
Pulsed Drain Current IDM -25 A 1
Single Pulse Avalanche Energy EAS 49 mJ 1
Total Power Dissipation PD 35 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Note 1: surface mounted on 1 inch FR-4 board, 2OZ copper 1
Thermal Resistance Junction-Case RθJC 3.8 ℃/W Note 1: surface mounted on 1 inch FR-4 board, 2OZ copper 1
Drain-Source Breakdown Voltage BVDSS -100 V VGS=0V , ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 240 270 mΩ VGS=-10V , ID=-5A 2
Static Drain-Source On-Resistance RDS(ON) 260 340 mΩ VGS=-4.5V , ID=-5A 2
Gate Threshold Voltage VGS(th) -1.2 -1.7 -3 V VGS=VDS , ID=-250uA 2
Drain-Source Leakage Current IDSS -50 uA VDS=-100V , VGS=0V , TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 2
Total Gate Charge Qg 17 nC VDS=-50V , VGS=-10V , ID=-5A 2
Gate-Source Charge Qgs 3.13 nC 2
Gate-Drain Charge Qgd 2.7 nC 2
Turn-On Delay Time Td(on) 11 ns VDD=-30V , VGS=-10V , RG=3.3, ID=-1A 2
Rise Time Tr 7.4 ns 2
Turn-Off Delay Time Td(off) 39 ns 2
Fall Time Tf 28 ns 2
Input Capacitance Ciss 900 pF VDS=-30V , VGS=0V , f=1MHz 2
Output Capacitance Coss 40 pF 2
Reverse Transfer Capacitance Crss 26 pF 2

CAD (KiCad official)

  • Symbol: HSU12P10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: hsu12p10-etched.step / hsu12p10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hsu12p10.step / hsu12p10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 52720c030c22ba88, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF