# HSU100P04

**HUASHUO** · MOSFETs · TO-252-2

HSU100P04 from HUASHUO, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with VGS rated ±20 V and threshold VGS(th) of -1.2 V min to -2.5 V max at ID=-250uA. |
| 2 | D | passive | Drain (exposed tab, and the center position of the package); VDS rated -40 V and continuous drain current -100 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current IS is -100 A max and the body diode forward voltage VSD is -1.2 V max at IS=-1A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current, TC=25℃ | ID | -100 |  |  | A | VGS @ -10V | 1 |
| Continuous Drain Current, TC=100℃ | ID | -64 |  |  | A | VGS @ -10V | 1 |
| Pulsed Drain Current | IDM | -295 |  |  | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 380 | mJ |  | 1 |
| Avalanche Current | IAS | -50 |  |  | A |  | 1 |
| Total Power Dissipation, TC=25℃ | PD |  |  | 52.1 | W |  | 1 |
| Total Power Dissipation, TA=25℃ | PD |  |  | 2 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 1.8 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -40 |  |  | V | VGS=0V , ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 5.8 | mΩ | VGS=-10V , ID=-20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 9.1 | mΩ | VGS=-4.5V , ID=-10A | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.8 | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current, TJ=25℃ | IDSS |  |  | 1 | uA | VDS=-32V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current, TJ=55℃ | IDSS |  |  | 5 | uA | VDS=-32V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Gate Resistance | Rg |  |  | 14 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 |
| Continuous Source Current | IS |  |  | -100 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSU100P04`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files: `hsu100p04-etched.step` / `hsu100p04-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsu100p04.step` / `hsu100p04.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757800770421178368) (6 pp, sha256 `e30c83b2bc867c8e`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsu100p04-datasheet.pdf)