component
HSU0903
Public Made by Adomby adom
HUASHUO MOSFETs, TO-252-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSU0903
HUASHUO · MOSFETs · TO-252-4
HSU0903 from HUASHUO, in a TO-252-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated VDS 100 V and ID 8 A at TC=25°C. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS rated ±20 V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2), rated VDS -100 V and ID -6.2 A at TC=25°C. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS rated ±20 V. |
| 5 | D1/D2 | passive | Exposed tab, common drain of the N-channel (D1) and P-channel (D2) MOSFETs, which are tied together internally. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | TO-252-4 |
| Category | Transistors/Thyristors |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS | 100 | V | 1 | |||
| Drain-Source Voltage (P-Channel) | VDS | -100 | V | 1 | |||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | 1 | ||
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (N-Channel) | ID@TA=25℃ | 2.6 | A | TA=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current (P-Channel) | ID@TA=25℃ | -1.8 | A | TA=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current (N-Channel) | ID@TA=100℃ | 1.6 | A | TA=100℃, VGS @ 10V | 1 | ||
| Continuous Drain Current (P-Channel) | ID@TA=100℃ | -1.1 | A | TA=100℃, VGS @ 10V | 1 | ||
| Continuous Drain Current (N-Channel) | ID@TC=25℃ | 8 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current (P-Channel) | ID@TC=25℃ | -6.2 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current (N-Channel) | ID@TC=100℃ | 4.4 | A | TC=100℃, VGS @ 10V | 1 | ||
| Continuous Drain Current (P-Channel) | ID@TC=100℃ | -3.9 | A | TC=100℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current (N-Channel) | IDM | 25 | A | 1 | |||
| Pulsed Drain Current (P-Channel) | IDM | -25 | A | 1 | |||
| Single Pulse Avalanche Energy (N-Channel) | EAS | 25 | mJ | Note 3: VDD=25V, VGS=10V, L=0.5mH, IAS=10A | 1 | ||
| Single Pulse Avalanche Energy (P-Channel) | EAS | 49 | mJ | Note 3: VDD=-25V, VGS=-10V, L=0.5mH, IAS=-14A | 1 | ||
| Avalanche Current (N-Channel) | IAS | 10 | A | 1 | |||
| Avalanche Current (P-Channel) | IAS | -14 | A | 1 | |||
| Total Power Dissipation (N-Channel) | PD@TA=25℃ | 1.5 | W | TA=25℃ | 1 | ||
| Total Power Dissipation (P-Channel) | PD@TA=25℃ | 1.5 | W | TA=25℃ | 1 | ||
| Storage Temperature Range (N-Channel) | TSTG | -55 | 150 | ℃ | 1 | ||
| Storage Temperature Range (P-Channel) | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range (N-Channel) | TJ | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range (P-Channel) | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | Note 1: surface mounted on a 1 inch FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 7 | ℃/W | Note 1: surface mounted on a 1 inch FR-4 board with 2OZ copper | 1 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 80 | 100 | mΩ | VGS=10V, ID=2.5A | 2 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 90 | 125 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1.2 | 2 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current (N-Channel) | IDSS | 1 | uA | VDS=80V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (N-Channel) | IDSS | 30 | uA | VDS=80V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current (N-Channel) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current (N-Channel) | IS | 12 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage (N-Channel) | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -100 | V | VGS=0V, ID=-250uA | 3 | ||
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 180 | 220 | mΩ | VGS=-10V, ID=-2A | 3 | |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 200 | 255 | mΩ | VGS=-4.5V, ID=-1.6A | 3 | |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1.2 | -1.9 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS | 1 | uA | VDS=-80V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-Source Leakage Current (P-Channel) | IDSS | 30 | uA | VDS=-80V, VGS=0V, TJ=55℃ | 3 | ||
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Continuous Source Current (P-Channel) | IS | -10 | A | VG=VD=0V, Force Current | 3 | ||
| Diode Forward Voltage (P-Channel) | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
HSU0903 - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4 (KiCad packages3D, STEP)
- 3D model files:
hsu0903-etched.step/hsu0903-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsu0903.step/hsu0903.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (9 pp, sha256
ba691a75875e951e, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).