component
HSTS5P3LLH6
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 10d ago |
| viewers | 10d ago |
| hsts5p3llh6-etched.glb | 10d ago |
| hsts5p3llh6-etched.step | 10d ago |
| hsts5p3llh6-hero.glb | 10d ago |
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| hsts5p3llh6.glb | 10d ago |
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| hsts5p3llh6.lbr | 10d ago |
| hsts5p3llh6.step | 10d ago |
| package.json | 10d ago |
| page.json | 10d ago |
| README.md | 10d ago |
HSTS5P3LLH6
HXY MOSFET · MOSFETs · SOP-8
HSTS5P3LLH6 from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied to pins 2 and 3. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET, with a gate-source voltage rating of ±20V and operation down to 2.5V gate drive. |
| 5 | D | passive | Drain of the P-channel MOSFET (VDS = -30V, ID = -5.1A), tied to pins 6, 7 and 8. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | -5.1 | A | TA=25℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -20.4 | A | 1 | |||
| Total Power Dissipation | PD | 2.5 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 58 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID= -250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -30V, VGS = 0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS =0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS= VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 43 | 55 | mΩ | VGS =-10V, ID =-5A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 65 | 90 | mΩ | VGS =-4.5V, ID =-4A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -5.1 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -20.4 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS = 0V, IS = -5.1A | 2 |
CAD (KiCad official)
- Symbol:
HSTS5P3LLH6 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsts5p3llh6-etched.step/hsts5p3llh6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsts5p3llh6.step/hsts5p3llh6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
e460e2819305bde0, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).