component

HSTPSC20H065CWY

Public Made by Adom

by adom

HXY MOSFET SiC Diodes, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSTPSC20H065CWY

HXY MOSFET · SiC Diodes · TO-247

HSTPSC20H065CWY from HXY MOSFET, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first Schottky diode (650 V, 10 A per leg), with its cathode tied to the common cathode and case.
2 K passive Common cathode of the dual diode, connected directly to the case/tab.
3 A2 passive Anode of the second Schottky diode (650 V, 10 A per leg), with its cathode tied to the common cathode and case.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-247
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 650 V 2
DC Peak Reverse Voltage VR 650 V 2
Surge Peak Reverse Voltage VRSM 650 V 2
Continuous Forward Current IF 38 A TC = 25°C; printed pair 38/76, first value 2
Continuous Forward Current IF 76 A TC = 25°C; printed pair 38/76, second value 2
Continuous Forward Current IF 19 A TC = 135°C; printed pair 19/38, first value 2
Continuous Forward Current IF 10 A TC = 160°C; printed pair 10/20, first value 2
Continuous Forward Current IF 20 A TC = 160°C; printed pair 10/20, second value 2
Repetitive Peak Forward Surge Current IFRM 45 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Repetitive Peak Forward Surge Current IFRM 27 A TC = 110°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 80 A TC = 25°C, tp=10ms, Half Sine Pulse 2
Non-Repetitive Forward Surge Current IFSM 70 A TC = 110°C, tp=10ms, Half Sine Pulse 2
i2dt value ∫i²dt 31.7 A²s TC = 25°C, tp=10ms, Half Sine Pulse 2
i2dt value ∫i²dt 24.3 A²s TC = 110°C, tp=10ms, Half Sine Pulse 2
Power dissipation Ptot 116 W TC = 25°C; printed pair 116/232, first value 2
Power dissipation Ptot 232 W TC = 25°C; printed pair 116/232, second value 2
Power dissipation Ptot 50 W TC = 110°C; printed pair 50/100, first value 2
Power dissipation Ptot 100 W TC = 110°C; printed pair 50/100, second value 2
Operating junction range Tj -55 175 °C 2
Storage temperature range Tstg -55 150 °C 2
Thermal resistance, junction-case RthJC 1.29 °C/W printed pair 1.29/0.65, first value 2
Thermal resistance, junction-case RthJC 0.65 °C/W printed pair 1.29/0.65, second value 2
Forward Voltage VF 1.3 1.5 V IF=10A, Tj=25°C 3
Reverse Current IR 50 μA VR=650V, Tj=25°C 3
Reverse Current IR 200 μA Tj=175°C 3

CAD (KiCad official)

  • Symbol: HSTPSC20H065CWY
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: hstpsc20h065cwy-etched.step / hstpsc20h065cwy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hstpsc20h065cwy.step / hstpsc20h065cwy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 2541a479951c0dea, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF