component

HSTN101120B111

Public Made by Adom

by adom

HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 17d ago
viewers hstn101120b111: symbol repaired (bidirectional TVS (the page says so)) · Ray 4d ago
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hstn101120b111-etched.step hstn101120b111: factory component page (tier=lcsc) · Ray 17d ago
hstn101120b111-hero.glb hstn101120b111: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
hstn101120b111-hero.overlay.json Publish 0.1.0 · Ray 17d ago
hstn101120b111.glb Publish 0.1.0 · Ray 17d ago
hstn101120b111.kicad_mod Publish 0.1.0 · Ray 17d ago
hstn101120b111.kicad_sym hstn101120b111: symbol repaired (bidirectional TVS (the page says so)) · Ray 4d ago
hstn101120b111.lbr hstn101120b111: symbol repaired (bidirectional TVS (the page says so)) · Ray 4d ago
hstn101120b111.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
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README.md Publish 0.1.0 · Ray 17d ago

HSTN101120B111

HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L

HSTN101120B111 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Bi-directional ESD protection line terminal (12V working voltage, 13.3V min breakdown at 1mA); connect to the protected I/O line.
2 2 passive Second terminal of the bi-directional ESD protection diode; connect to the other side of the protected line or to ground, since the device is bi-directional.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Working Voltage VRWM 12 V 2
Reverse Breakdown Voltage VBR 13.3 V IT = 1mA 2
Reverse Leakage Current IR 200 nA VRWM = 12V 2
Clamping Voltage VC 19 V IPP = 1A, tp = 8/20μs 2
Clamping Voltage VC 26 V IPP = 5A, tp = 8/20μs 2
Junction Capacitance CJ 10 13 pF VR = 0V, f = 1MHz 2
Peak Pulse Power PPP 150 W tp = 8/20μs 1
Maximum lead temperature for soldering TL 260 °C during 10s 1
Storage Temperature Range Tstg -55 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
ESD air discharge IEC61000-4-2 -20 20 kV air discharge 1
ESD contact discharge IEC61000-4-2 -25 25 kV contact discharge 1
EFT IEC61000-4-4 40 A 5/50 ns 1

CAD (KiCad official)

  • Symbol: HSTN101120B111
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hstn101120b111-etched.step / hstn101120b111-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hstn101120b111.step / hstn101120b111.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 489e7e3e3b3f588c, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF