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Ray Publish 0.1.0 a48ed9f 25d ago

HSTN101050BL30

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

HSTN101050BL30 from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive One terminal of the bidirectional ESD protection diode for a single I/O line, with a 5V working voltage (VRWM) and 6.0V minimum breakdown voltage at 1mA.
2 2 passive The other terminal of the bidirectional ESD protection diode for the same single I/O line, rated for ±8kV contact and ±15kV air per IEC 61000-4-2.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power PPP 100 W tp = 8/20 us 1
Maximum lead temperature for soldering TL 260 °C 10 s 1
Storage Temperature Range Tstg -55 150 °C 1
Maximum junction temperature Tj 150 °C 1
Operating Temperature Range Top -55 150 °C 1
Reverse Breakdown Voltage VBR 6 V IT = 1 mA 2
Reverse Leakage Current IR 0.1 µA VRWM = 5.0 V 2
Reverse Working Voltage VRWM 5 V 2
Clamping Voltage VC 13 V IRWM = 1 A, tp = 8/20 µs 2
Clamping Voltage VC 25 V IRWM = 4 A, tp = 8/20 µs 2
TLP Clamping Voltage VCTLP 26 V IPP = 8 A, IEC61000-4-2 Level 2 equivalent (±4 kV contact, ±8 kV air) 2
TLP Clamping Voltage VCTLP 38 V IPP = 16 A, IEC61000-4-2 Level 4 equivalent (±8 kV contact, ±16 kV air) 2
Junction Capacitance CJ 0.5 pF VR = 0 V, f = 1 MHz 2
IEC 61000-4-2 ESD air discharge level -15 15 kV IEC61000-4-2 air discharge 1
IEC 61000-4-2 ESD contact discharge level -8 8 kV IEC61000-4-2 contact discharge 1
IEC 61000-4-4 EFT current 40 A IEC61000-4-4, 5/50 ns 1

CAD (KiCad official)

  • Symbol: HSTN101050BL30
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: hstn101050bl30-etched.step / hstn101050bl30-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hstn101050bl30.step / hstn101050bl30.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 88991785beda690c, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF