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Contents

README

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HSTD30PF03LT4

HXY MOSFET · MOSFETs · TO-252-2L

HSTD30PF03LT4 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; threshold VGS(th) -1.0 V min to -2.5 V max at ID=-250uA, absolute maximum VGS ±20 V, usable with gate drive as low as 4.5 V.
2 D passive Drain, connected to the exposed tab; VDS rated -30 V, continuous ID -40 A at TC=25℃, pulsed IDM -70 A.
3 S passive Source; continuous source current IS -40 A, body diode forward voltage VSD max -1.2 V at IS=-1A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 18 23 mΩ VGS=-10V, ID=-15A 2
Static Drain-Source On-Resistance RDS(ON) 37 44 mΩ VGS=-4.5V, ID=-10A 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS -40 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -75 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 2
Drain-Source Voltage VDS -30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID -40 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID -25 A TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM -70 A TC=25℃ 1
Total Power Dissipation PD 34.7 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
BVDSS Temperature Coefficient △BVDSS/△TJ -0.022 V/℃ Reference to 25℃, ID=-1mA 2
VGS(th) Temperature Coefficient △VGS(th) 4.6 mV/℃ 2
Forward Transconductance gfs 5 S VDS=-5V, ID=-10A 2
Gate Resistance Rg 13 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (-4.5V) Qg 12.5 nC VDS=-15V, VGS=-4.5V, ID=-15A 2
Gate-Source Charge Qgs 5.4 nC VDS=-15V, VGS=-4.5V, ID=-15A 2
Gate-Drain Charge Qgd 5 nC VDS=-15V, VGS=-4.5V, ID=-15A 2
Turn-On Delay Time Td(on) 4.4 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-15A 2
Rise Time Tr 11.2 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-15A 2
Turn-Off Delay Time Td(off) 34 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-15A 2
Fall Time Tf 18 ns VDD=-15V, VGS=-10V, RG=3.3, ID=-15A 2
Input Capacitance Ciss 1345 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 194 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 158 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 12.4 nS IF=-15A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 5 nC IF=-15A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSTD30PF03LT4
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: hstd30pf03lt4-etched.step / hstd30pf03lt4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hstd30pf03lt4.step / hstd30pf03lt4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 d5de08a13d9d4637, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF