component
HSTD30PF03LT4
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSTD30PF03LT4
HXY MOSFET · MOSFETs · TO-252-2L
HSTD30PF03LT4 from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; threshold VGS(th) -1.0 V min to -2.5 V max at ID=-250uA, absolute maximum VGS ±20 V, usable with gate drive as low as 4.5 V. |
| 2 | D | passive | Drain, connected to the exposed tab; VDS rated -30 V, continuous ID -40 A at TC=25℃, pulsed IDM -70 A. |
| 3 | S | passive | Source; continuous source current IS -40 A, body diode forward voltage VSD max -1.2 V at IS=-1A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 18 | 23 | mΩ | VGS=-10V, ID=-15A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 37 | 44 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -2.5 | V | VGS=VDS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -40 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -75 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID | -40 | A | TC=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | -25 | A | TC=100℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -70 | A | TC=25℃ | 1 | ||
| Total Power Dissipation | PD | 34.7 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 3.6 | ℃/W | 1 | |||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.022 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 4.6 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 5 | S | VDS=-5V, ID=-10A | 2 | ||
| Gate Resistance | Rg | 13 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (-4.5V) | Qg | 12.5 | nC | VDS=-15V, VGS=-4.5V, ID=-15A | 2 | ||
| Gate-Source Charge | Qgs | 5.4 | nC | VDS=-15V, VGS=-4.5V, ID=-15A | 2 | ||
| Gate-Drain Charge | Qgd | 5 | nC | VDS=-15V, VGS=-4.5V, ID=-15A | 2 | ||
| Turn-On Delay Time | Td(on) | 4.4 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-15A | 2 | ||
| Rise Time | Tr | 11.2 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-15A | 2 | ||
| Turn-Off Delay Time | Td(off) | 34 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-15A | 2 | ||
| Fall Time | Tf | 18 | ns | VDD=-15V, VGS=-10V, RG=3.3, ID=-15A | 2 | ||
| Input Capacitance | Ciss | 1345 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 194 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 158 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 12.4 | nS | IF=-15A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 5 | nC | IF=-15A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSTD30PF03LT4 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
hstd30pf03lt4-etched.step/hstd30pf03lt4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hstd30pf03lt4.step/hstd30pf03lt4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
d5de08a13d9d4637, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).