# HSST3134

**HUASHUO** · MOSFETs · SOT-523

HSST3134 from HUASHUO, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±8 V absolute maximum, with threshold of 0.5 V min to 1.1 V max (VDS=10V, ID=300mA) and ESD protection. |
| 2 | S | passive | Source; continuous drain current is 1.0 A at TA=25℃ (VGS 4.5V) and pulsed drain current is 4.0 A. |
| 3 | D | passive | Drain; drain-source voltage is rated at 20 V maximum with RDS(ON) typically 200 mΩ at VGS=4.5V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -8 |  | 8 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 1 | A | VGS @ 4.5V, TA=25℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 4 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 0.14 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 800 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS=0V, ID=1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 200 | 250 | mΩ | VGS=4.5V, ID=650mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 250 | 300 | mΩ | VGS=2.5V, ID=450mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 310 | 450 | mΩ | VGS=1.8V, ID=250mA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.1 | V | VDS=10V, ID=300mA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=20V, VGS=0V, TJ=25℃ | 2 |
| Gate-Source Leakage Current | IGSS | -10 |  | 10 | uA | VGS=±8V, VDS=0V | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=100mA, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSST3134`
- Footprint: `Package_TO_SOT_SMD:SOT-523`
- 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `hsst3134-etched.step` / `hsst3134-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsst3134.step` / `hsst3134.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757799579108548608) (6 pp, sha256 `e130c91667127464`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsst3134-datasheet.pdf)