# HSST3018

**HUASHUO** · MOSFETs · SOT-523

HSST3018 from HUASHUO, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±10 V, threshold 0.5 to 1.2 V at ID=250uA, and the pin is ESD protected up to 2KV. |
| 2 | S | passive | Source; continuous source current is 0.5 A max and body diode forward voltage is 1.2 V max at IS=1A. |
| 3 | D | passive | Drain; drain-source voltage is rated 30 V, continuous drain current 0.5 A at TA=25℃ and pulsed 4 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -10 |  | 10 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 0.5 | A | TA=25℃, VGS @ 4.5V | 1 |
| Continuous Drain Current | ID |  |  | 0.4 | A | TA=70℃, VGS @ 4.5V | 1 |
| Pulsed Drain Current | IDM |  |  | 4 | A | Note 2: pulse width ≤300us, duty cycle ≤2% | 1 |
| Total Power Dissipation | PD |  |  | 0.25 | W | TA=25℃, note 3 | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-ambient | RθJA |  |  | 500 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 300 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 440 | 600 | mΩ | VGS=4.5V, ID=300mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 540 | 900 | mΩ | VGS=2.5V, ID=200mA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=30V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -10 |  | 10 | uA | VGS=±10V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 0.5 | A | VG=VD=0V, Force Current; note 1,4 | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `HSST3018`
- Footprint: `Package_TO_SOT_SMD:SOT-523`
- 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `hsst3018-etched.step` / `hsst3018-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hsst3018.step` / `hsst3018.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](docs/hsst3018-datasheet.pdf) (7 pp, sha256 `615d3ff15f6ebe69`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hsst3018-datasheet.pdf)