component

HSSM3K335RLF

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorshssm3k335rlffactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 9h ago
viewers hssm3k335rlf: viewers · Ray 9h ago
hssm3k335rlf-etched.glb Publish 0.1.0 · Ray 9h ago
hssm3k335rlf-etched.step hssm3k335rlf: factory component page (tier=lcsc) · Ray 9h ago
hssm3k335rlf-hero.glb hssm3k335rlf: hero GLB from the etched model (keeps the MPN mark) · Ray 9h ago
hssm3k335rlf-hero.overlay.json Publish 0.1.0 · Ray 9h ago
hssm3k335rlf.glb Publish 0.1.0 · Ray 9h ago
hssm3k335rlf.kicad_mod Publish 0.1.0 · Ray 9h ago
hssm3k335rlf.kicad_sym Publish 0.1.0 · Ray 9h ago
hssm3k335rlf.lbr Publish 0.1.0 · Ray 9h ago
hssm3k335rlf.step Publish 0.1.0 · Ray 9h ago
package.json Publish 0.1.0 · Ray 9h ago
page.json Set visibility: public · Ray 9h ago
README.md Publish 0.1.0 · Ray 9h ago

HSSM3K335RLF

HXY MOSFET · MOSFETs · SOT-23

HSSM3K335RLF from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage rated ±12V max and threshold of 0.7V min to 1.4V max at ID=250μA.
2 D passive Drain of the N-channel MOSFET, rated 30V drain-source voltage and 5.8A continuous drain current (30A pulsed).
3 S passive Source of the N-channel MOSFET, the reference terminal for gate drive, with RDS(ON) below 30mΩ at VGS=10V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 33 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.7 0.9 1.4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 41 55 mΩ VGS=2.5V, ID=4A 2
Drain-Source On-State Resistance RDS(ON) 32 42 mΩ VGS=4.5V, ID=5A 2
Drain-Source On-State Resistance RDS(ON) 28 30 mΩ VGS=10V, ID=5.8A 2
Forward Transconductance gFS 10 S VDS=5V,ID=5A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=5.8A 2
Diode Forward Current IS 5.8 A 2
Drain-Source Voltage VDS 30 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current-Continuous ID 5.8 A TA=25℃ 1
Drain Current-Pulsed IDM 30 A TA=25℃, Note 1 1
Maximum Power Dissipation PD 1.4 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 89 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Input Capacitance Clss 825 PF VDS=15V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 100 PF VDS=15V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 78 PF VDS=15V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 3.3 nS VDD=15V, RL=2.7Ω, VGS=10V, RGEN=3Ω 2
Turn-on Rise Time tr 4.8 nS VDD=15V, RL=2.7Ω, VGS=10V, RGEN=3Ω 2
Turn-Off Delay Time td(off) 26 nS VDD=15V, RL=2.7Ω, VGS=10V, RGEN=3Ω 2
Turn-Off Fall Time tf 4 nS VDD=15V, RL=2.7Ω, VGS=10V, RGEN=3Ω 2
Total Gate Charge Qg 10 nC VDS=15V,ID=5.8A, VGS=4.5V 2
Gate-Source Charge Qgs 1.6 nC VDS=15V,ID=5.8A, VGS=4.5V 2
Gate-Drain Charge Qgd 3.1 nC VDS=15V,ID=5.8A, VGS=4.5V 2

CAD (KiCad official)

  • Symbol: HSSM3K335RLF
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hssm3k335rlf-etched.step / hssm3k335rlf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hssm3k335rlf.step / hssm3k335rlf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 92c5388b091c12bb, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF