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HSSM3J331RLF

HXY MOSFET · MOSFETs · SOT-23

HSSM3J331RLF from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the device operates with gate voltages as low as 2.5V and VGS is rated ±12V maximum.
2 S passive Source of the P-channel MOSFET; drain-source voltage is rated -20V and continuous current -4.2A.
3 D passive Drain of the P-channel MOSFET, on the single lead side of the package; VDS is rated -20V with ID of -4.2A continuous and -15A pulsed.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) -0.45 -0.7 -1 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 48 55 mΩ VGS=-4.5V, ID=-4A 2
Drain-Source On-State Resistance RDS(ON) 60 75 mΩ VGS=-2.5V, ID=-3A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-4.1A 2
Diode Forward Current IS -4.1 A 2
Drain-Source Voltage VDS -20 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current-Continuous ID -4.2 A TA=25℃ 1
Drain Current-Pulsed IDM -15 A TA=25℃, Note 1 1
Maximum Power Dissipation PD 1.7 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 74 ℃/W Note 2, Surface Mounted on FR4 Board, t ≤ 10 sec 1
Forward Transconductance gFS 6 S VDS=-5V,ID=-4.2A 2
Input Capacitance Clss 740 PF VDS=-4V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 290 PF VDS=-4V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 190 PF VDS=-4V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 12 nS VDD=-4V, RL=-1.2Ω, VGEN=-4.5V,Rg=1Ω 2
Turn-on Rise Time tr 35 nS VDD=-4V, RL=-1.2Ω, VGEN=-4.5V,Rg=1Ω 2
Turn-Off Delay Time td(off) 30 nS VDD=-4V, RL=-1.2Ω, VGEN=-4.5V,Rg=1Ω 2
Turn-Off Fall Time tf 10 nS VDD=-4V, RL=-1.2Ω, VGEN=-4.5V,Rg=1Ω 2
Total Gate Charge Qg 7.8 nC VDS=-4V,ID=-4.1A,VGS=-4.5V 2
Gate-Source Charge Qgs 1.2 nC VDS=-4V,ID=-4.1A,VGS=-4.5V 2
Gate-Drain Charge Qgd 1.6 nC VDS=-4V,ID=-4.1A,VGS=-4.5V 2

CAD (KiCad official)

  • Symbol: HSSM3J331RLF
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: hssm3j331rlf-etched.step / hssm3j331rlf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hssm3j331rlf.step / hssm3j331rlf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 05ce53d1c40268e7, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF