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README.md hssc3134: specified limits as data (metadata.characteristics, 21 rows from the datasheet) · Ray 17d ago

HSSC3134

HUASHUO · MOSFETs · SOT-723

HSSC3134 from HUASHUO, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is limited to ±12 V absolute maximum, with threshold of 0.35 V min to 1.1 V max at ID=250uA.
2 S passive Source; continuous source current is 0.77 A, and body diode forward voltage is 1.2 V max at IS=1A.
3 D passive Drain; drain-source voltage is 20 V maximum, continuous drain current 0.77 A at TA=25℃ and pulsed 1.9 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOT-723
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID@TA=25℃ 0.77 A VGS @ 4.5V, TA=25℃ 1
Continuous Drain Current ID@TA=70℃ 0.5 A VGS @ 4.5V, TA=70℃ 1
Pulsed Drain Current IDM 1.9 A 1
Total Power Dissipation PD@TA=25℃ 0.15 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 890 ℃/W Surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance Junction-Case RθJC 500 ℃/W Note 1 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 370 mΩ VGS=4.5V, ID=650mA 2
Static Drain-Source On-Resistance RDS(ON) 440 mΩ VGS=2.5V, ID=550mA 2
Static Drain-Source On-Resistance RDS(ON) 750 mΩ VGS=1.8V, ID=450mA 2
Gate Threshold Voltage VGS(th) 0.35 0.7 1.1 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=20V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=20V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -20 20 uA VGS=±10V, VDS=0V 2
Forward Transconductance gfs 1 S VDS=10V, ID=800mA 2
Continuous Source Current IS 0.77 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSSC3134
  • Footprint: Package_TO_SOT_SMD:SOT-723
  • 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: hssc3134-etched.step / hssc3134-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hssc3134.step / hssc3134.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (7 pp, sha256 64943c9adacd128b, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF