component

HSS5N10

Public Made by Adom

by adom

HUASHUO MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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hss5n10-etched.step hss5n10: factory component page (tier=lcsc) · Ray 4h ago
hss5n10-hero.glb hss5n10: hero GLB from the etched model (keeps the MPN mark) · Ray 4h ago
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HSS5N10

HUASHUO · MOSFETs · SOT-23L

HSS5N10 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.0 V min to 2.5 V max at 250 uA.
2 S passive Source; continuous source current up to 5 A through the body diode, and the drain-source rating is 100 V.
3 D passive Drain; drain-source voltage rated 100 V, with continuous drain current of 5 A at TA=25℃ and pulsed drain current of 15 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOT-23L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ 5 A VGS @ 10V 1
Continuous Drain Current ID@TA=100℃ 4 A VGS @ 10V 1
Pulsed Drain Current IDM 15 A 1
Total Power Dissipation PD@TA=25℃ 1.4 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W steady state 1
Thermal Resistance Junction-ambient RθJA 80 ℃/W t<10s 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 100 120 mΩ VGS=10V , ID=4A 2
Static Drain-Source On-Resistance RDS(ON) 105 130 mΩ VGS=4.5V , ID=3A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=100V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS 10 uA VDS=100V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 5 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSS5N10
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23L (KiCad packages3D, STEP)
  • 3D model files: hss5n10-etched.step / hss5n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hss5n10.step / hss5n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 f740adb4360f0c1e, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF