component
HSS4P06
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| hss4p06-etched.glb | 23d ago |
| hss4p06-etched.step | 23d ago |
| hss4p06-hero.glb | 23d ago |
| hss4p06-hero.overlay.json | 23d ago |
| hss4p06.glb | 23d ago |
| hss4p06.kicad_mod | 23d ago |
| hss4p06.kicad_sym | 23d ago |
| hss4p06.lbr | 23d ago |
| hss4p06.step | 23d ago |
| package.json | 23d ago |
| page.json | 17d ago |
| README.md | 17d ago |
HSS4P06
HUASHUO · MOSFETs · SOT-23L
HSS4P06 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with gate threshold VGS(th) of -1.0 V min to -2.5 V max at ID=-250uA. |
| 2 | S | passive | Source; continuous source (body diode) current is -4 A and pulsed -16 A. |
| 3 | D | passive | Drain; drain-source voltage is -60 V max and continuous drain current is -4 A at TC=25℃ (pulsed -16 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ -10V | ID@TC=25℃ | -4 | A | TC=25℃, VGS @ -10V | 1 | ||
| Continuous Drain Current, VGS @ -10V | ID@TC=70℃ | -3.5 | A | TC=70℃, VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -16 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 1.4 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 100 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 62 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 75 | 90 | mΩ | VGS=-10V, ID=-4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 90 | 110 | mΩ | VGS=-4.5V, ID=-3A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-60V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=-60V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -4 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -16 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSS4P06 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files:
hss4p06-etched.step/hss4p06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hss4p06.step/hss4p06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
537203512b36e5a8, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).