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HSS3407A

Public Made by Adom

by adom

HUASHUO MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSS3407A

HUASHUO · MOSFETs · SOT-23-3

HSS3407A from HUASHUO, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated ±20 V, with threshold VGS(th) of -1.2 V min, -1.6 V typ and -3 V max at ID=-250uA.
2 S passive Source of the P-channel MOSFET; continuous source (body diode) current is -3.1 A max and pulsed -15 A.
3 D passive Drain; drain-source voltage is rated -30 V, with continuous drain current of -3.1 A steady state and pulsed -15 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ ID -3.7 A 10s, VGS @ -10V 1
Continuous Drain Current ID@TA=25℃ ID -3.1 A Steady State, VGS @ -10V 1
Continuous Drain Current ID@TA=70℃ ID -3 A 10s, VGS @ -10V 1
Continuous Drain Current ID@TA=70℃ ID -2.6 A Steady State, VGS @ -10V 1
Pulsed Drain Current IDM -15 A 1
Total Power Dissipation PD@TA=25℃ PD 1.32 W 10s 1
Total Power Dissipation PD@TA=25℃ PD 1 W Steady State 1
Total Power Dissipation PD@TA=70℃ PD 0.84 W 10s 1
Total Power Dissipation PD@TA=70℃ PD 0.64 W Steady State 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 125 ℃/W Steady state 1
Thermal Resistance Junction-Ambient RθJA 95 ℃/W t ≤10s 1
Thermal Resistance Junction-Case RθJC 80 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 56 70 mΩ VGS=-10V, ID=-3A 2
Static Drain-Source On-Resistance RDS(ON) 73 95 mΩ VGS=-4.5V, ID=-2A 2
Gate Threshold Voltage VGS(th) -1.2 -1.6 -3 V VGS=VDS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Total Gate Charge (-4.5V) Qg 6.4 9 nC VDS=-15V, VGS=-4.5V, ID=-3A 2
Gate-Source Charge Qgs 2.3 3.2 nC VDS=-15V, VGS=-4.5V, ID=-3A 2
Gate-Drain Charge Qgd 1.9 2.7 nC VDS=-15V, VGS=-4.5V, ID=-3A 2
Turn-On Delay Time Td(on) 2.8 5.6 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-3A 2
Rise Time Tr 8.4 15.1 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-3A 2
Turn-Off Delay Time Td(off) 39 78 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-3A 2
Fall Time Tf 6 12 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-3A 2
Input Capacitance Ciss 583 816 pF VDS=-15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 100 140 pF VDS=-15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 80 112 pF VDS=-15V, VGS=0V, f=1MHz 2
Continuous Source Current IS -3.1 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM -15 A 2
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSS3407A
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: hss3407a-etched.step / hss3407a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hss3407a.step / hss3407a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (5 pp, sha256 34489bc6e4dc76ec, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF