component
HSS3407
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSS3407
HUASHUO · MOSFETs · SOT-23L
HSS3407 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage limited to ±20 V and threshold VGS(th) of -1.0 to -2 V at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET, with continuous source (body diode) current up to -4.1 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for -30 V drain-source voltage and -4.1 A continuous drain current (steady state, TA=25℃). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current, VGS @ -10V, TA=25℃ | ID@TA=25℃ | -3.8 | A | 10s column | 1 | ||
| Continuous Drain Current, VGS @ -10V, TA=25℃ | ID@TA=25℃ | -4.1 | A | Steady State column | 1 | ||
| Continuous Drain Current, VGS @ -10V, TA=70℃ | ID@TA=70℃ | -2.9 | A | 10s column | 1 | ||
| Continuous Drain Current, VGS @ -10V, TA=70℃ | ID@TA=70℃ | -3.2 | A | Steady State column | 1 | ||
| Pulsed Drain Current | IDM | -16 | A | 1 | |||
| Total Power Dissipation, TA=25℃ | PD@TA=25℃ | 1.32 | W | 10s column | 1 | ||
| Total Power Dissipation, TA=25℃ | PD@TA=25℃ | 1.4 | W | Steady State column | 1 | ||
| Total Power Dissipation, TA=70℃ | PD@TA=70℃ | 0.84 | W | 10s column | 1 | ||
| Total Power Dissipation, TA=70℃ | PD@TA=70℃ | 0.9 | W | Steady State column | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 110 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | 75 | ℃/W | t ≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 65 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 47 | 60 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 65 | 85 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -4.1 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -16 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSS3407 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files:
hss3407-etched.step/hss3407-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hss3407.step/hss3407.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (5 pp, sha256
59d0186097d9bbed, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSS3407
**HUASHUO** · MOSFETs · SOT-23L
HSS3407 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage limited to ±20 V and threshold VGS(th) of -1.0 to -2 V at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET, with continuous source (body diode) current up to -4.1 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for -30 V drain-source voltage and -4.1 A continuous drain current (steady state, TA=25℃). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current, VGS @ -10V, TA=25℃ | ID@TA=25℃ | -3.8 | | | A | 10s column | 1 |
| Continuous Drain Current, VGS @ -10V, TA=25℃ | ID@TA=25℃ | -4.1 | | | A | Steady State column | 1 |
| Continuous Drain Current, VGS @ -10V, TA=70℃ | ID@TA=70℃ | -2.9 | | | A | 10s column | 1 |
| Continuous Drain Current, VGS @ -10V, TA=70℃ | ID@TA=70℃ | -3.2 | | | A | Steady State column | 1 |
| Pulsed Drain Current | IDM | -16 | | | A | | 1 |
| Total Power Dissipation, TA=25℃ | PD@TA=25℃ | | | 1.32 | W | 10s column | 1 |
| Total Power Dissipation, TA=25℃ | PD@TA=25℃ | | | 1.4 | W | Steady State column | 1 |
| Total Power Dissipation, TA=70℃ | PD@TA=70℃ | | | 0.84 | W | 10s column | 1 |
| Total Power Dissipation, TA=70℃ | PD@TA=70℃ | | | 0.9 | W | Steady State column | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-Ambient | RθJA | | | 110 | ℃/W | | 1 |
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | | | 75 | ℃/W | t ≤10s | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 65 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 47 | 60 | mΩ | VGS=-10V, ID=-3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 65 | 85 | mΩ | VGS=-4.5V, ID=-2A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS | | | -4.1 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -16 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `HSS3407`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files: `hss3407-etched.step` / `hss3407-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hss3407.step` / `hss3407.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603363806533722112) (5 pp, sha256 `59d0186097d9bbed`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hss3407-datasheet.pdf)