component
HSS2P15
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1mo ago |
| viewers | 1mo ago |
| hss2p15-etched.glb | 1mo ago |
| hss2p15-etched.step | 1mo ago |
| hss2p15-hero.glb | 1mo ago |
| hss2p15-hero.overlay.json | 1mo ago |
| hss2p15.glb | 1mo ago |
| hss2p15.kicad_mod | 1mo ago |
| hss2p15.kicad_sym | 1mo ago |
| hss2p15.lbr | 1mo ago |
| hss2p15.step | 1mo ago |
| package.json | 1mo ago |
| page.json | 23d ago |
| README.md | 23d ago |
HSS2P15
HUASHUO · MOSFETs · SOT-23L
HSS2P15 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum VGS of ±20 V, threshold VGS(th) -2.0 to -4.0 V and leakage up to ±100 nA at VGS=±20 V. |
| 2 | S | passive | Source; P-channel MOSFET source terminal with continuous source current IS of -1 A and body-diode forward voltage up to -1.2 V. |
| 3 | D | passive | Drain; drain-source voltage rated -150 V, continuous drain current -2 A at TA=25℃ and pulsed -7.5 A, with RDS(ON) max 780 mΩ at VGS=-10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -2 | A | VGS @ 10V, TA=25℃ | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -1.3 | A | VGS @ 10V, TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -7.5 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 12.5 | mJ | 1 | |||
| Avalanche Current | IAS | -5 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 125 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 40 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -150 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 650 | 780 | mΩ | VGS=-10V, ID=-1A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 700 | 980 | mΩ | VGS=-6V, ID=-0.5A | 2 | |
| Gate Threshold Voltage | VGS(th) | -2 | -3 | -4 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=-120V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 30 | uA | VDS=-120V, VGS=0V, TJ=150℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -1 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSS2P15 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files:
hss2p15-etched.step/hss2p15-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hss2p15.step/hss2p15.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
12e6a8d69b2e595f, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).