component
HSS2607
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSS2607
HUASHUO · MOSFETs · SOT-23L
HSS2607 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET with VGS rated ±12 V maximum and threshold VGS(th) of -0.3 V min to -1.0 V max at ID=-250uA. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; continuous drain current is -5 A at TA=25℃ with VGS=-4.5 V. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; VDS is rated -20 V maximum and pulsed drain current IDM -18.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 25 | 32 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 32 | 40 | mΩ | VGS=-2.5V, ID=-2A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 42 | 55 | mΩ | VGS=-1.8V, ID=-1.5A | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.3 | -0.5 | -1 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-16V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-16V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Total Gate Charge (-4.5V) | Qg | 27.3 | 38.2 | nC | VDS=-15V, VGS=-4.5V, ID=-4A | 2 | |
| Gate-Source Charge | Qgs | 3.6 | 5 | nC | VDS=-15V, VGS=-4.5V, ID=-4A | 2 | |
| Gate-Drain Charge | Qgd | 6.5 | 9.1 | nC | VDS=-15V, VGS=-4.5V, ID=-4A | 2 | |
| Turn-On Delay Time | Td(on) | 9.2 | 18.4 | ns | VDD=-10V, VGS=-4.5V, RG=3.3, ID=-4A | 2 | |
| Rise Time | Tr | 59 | 106 | ns | VDD=-10V, VGS=-4.5V, RG=3.3, ID=-4A | 2 | |
| Turn-Off Delay Time | Td(off) | 99 | 198 | ns | VDD=-10V, VGS=-4.5V, RG=3.3, ID=-4A | 2 | |
| Fall Time | Tf | 71 | 142 | ns | VDD=-10V, VGS=-4.5V, RG=3.3, ID=-4A | 2 | |
| Input Capacitance | Ciss | 2280 | 3192 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 220 | 308 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 187 | 262 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 | |
| Continuous Source Current | IS | -4.7 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -18.8 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -5 | A | TA=25℃, VGS @ -4.5V | 1 | ||
| Continuous Drain Current | ID | -3.8 | A | TA=70℃, VGS @ -4.5V | 1 | ||
| Pulsed Drain Current | IDM | -18.8 | A | 1 | |||
| Total Power Dissipation | PD | 1 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 1 | |||
| BVDSS Temperature Coefficient | △BVDSS/△TJ | -0.01 | V/℃ | Reference to 25℃, ID=-1mA | 2 | ||
| VGS(th) Temperature Coefficient | △VGS(th) | 2.96 | mV/℃ | 2 | |||
| Forward Transconductance | gfs | 21 | S | VDS=-5V, ID=-4A | 2 | ||
| Reverse Recovery Time | trr | 52 | nS | IF=-4A, dI/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 28 | nC | IF=-4A, dI/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSS2607 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files:
hss2607-etched.step/hss2607-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hss2607.step/hss2607.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (5 pp, sha256
fe5b70dc8a54a17c, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSS2607
**HUASHUO** · MOSFETs · SOT-23L
HSS2607 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET with VGS rated ±12 V maximum and threshold VGS(th) of -0.3 V min to -1.0 V max at ID=-250uA. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; continuous drain current is -5 A at TA=25℃ with VGS=-4.5 V. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET; VDS is rated -20 V maximum and pulsed drain current IDM -18.8 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 25 | 32 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 32 | 40 | mΩ | VGS=-2.5V, ID=-2A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 42 | 55 | mΩ | VGS=-1.8V, ID=-1.5A | 2 |
| Gate Threshold Voltage | VGS(th) | -0.3 | -0.5 | -1 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-16V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | -5 | uA | VDS=-16V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Total Gate Charge (-4.5V) | Qg | | 27.3 | 38.2 | nC | VDS=-15V, VGS=-4.5V, ID=-4A | 2 |
| Gate-Source Charge | Qgs | | 3.6 | 5 | nC | VDS=-15V, VGS=-4.5V, ID=-4A | 2 |
| Gate-Drain Charge | Qgd | | 6.5 | 9.1 | nC | VDS=-15V, VGS=-4.5V, ID=-4A | 2 |
| Turn-On Delay Time | Td(on) | | 9.2 | 18.4 | ns | VDD=-10V, VGS=-4.5V, RG=3.3, ID=-4A | 2 |
| Rise Time | Tr | | 59 | 106 | ns | VDD=-10V, VGS=-4.5V, RG=3.3, ID=-4A | 2 |
| Turn-Off Delay Time | Td(off) | | 99 | 198 | ns | VDD=-10V, VGS=-4.5V, RG=3.3, ID=-4A | 2 |
| Fall Time | Tf | | 71 | 142 | ns | VDD=-10V, VGS=-4.5V, RG=3.3, ID=-4A | 2 |
| Input Capacitance | Ciss | | 2280 | 3192 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss | | 220 | 308 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 187 | 262 | pF | VDS=-15V, VGS=0V, f=1MHz | 2 |
| Continuous Source Current | IS | | | -4.7 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | -18.8 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD | | | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | -20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | -5 | A | TA=25℃, VGS @ -4.5V | 1 |
| Continuous Drain Current | ID | | | -3.8 | A | TA=70℃, VGS @ -4.5V | 1 |
| Pulsed Drain Current | IDM | | | -18.8 | A | | 1 |
| Total Power Dissipation | PD | | | 1 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 125 | ℃/W | | 1 |
| Thermal Resistance Junction-Case | RθJC | | | 80 | ℃/W | | 1 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ | | -0.01 | | V/℃ | Reference to 25℃, ID=-1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) | | 2.96 | | mV/℃ | | 2 |
| Forward Transconductance | gfs | | 21 | | S | VDS=-5V, ID=-4A | 2 |
| Reverse Recovery Time | trr | | 52 | | nS | IF=-4A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr | | 28 | | nC | IF=-4A, dI/dt=100A/µs, TJ=25℃ | 2 |
## CAD (KiCad official)
- Symbol: `HSS2607`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files: `hss2607-etched.step` / `hss2607-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hss2607.step` / `hss2607.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](docs/hss2607-datasheet.pdf) (5 pp, sha256 `fe5b70dc8a54a17c`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hss2607-datasheet.pdf)