component
HSS2333
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 28d ago |
| viewers | 28d ago |
| hss2333-etched.glb | 28d ago |
| hss2333-etched.step | 28d ago |
| hss2333-hero.glb | 28d ago |
| hss2333-hero.overlay.json | 28d ago |
| hss2333.glb | 28d ago |
| hss2333.kicad_mod | 28d ago |
| hss2333.kicad_sym | 28d ago |
| hss2333.lbr | 28d ago |
| hss2333.step | 28d ago |
| package.json | 28d ago |
| page.json | 24d ago |
| README.md | 24d ago |
HSS2333
HUASHUO · MOSFETs · SOT-23L
HSS2333 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a gate-source voltage rating of ±12 V and a threshold of -0.4 to -1.2 V at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET, with continuous source current of -8 A and pulsed source current of -32 A. |
| 3 | D | passive | Drain of the P-channel MOSFET, with a drain-source voltage rating of -12 V and continuous drain current of -8 A at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -12 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | -8 | A | VGS @ -4.5V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | -6.8 | A | VGS @ -4.5V | 1 | ||
| Pulsed Drain Current | IDM | -32 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1.2 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 100 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -12 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 15.3 | 18 | mΩ | VGS=-4.5V, ID=-8A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 20.8 | 28 | mΩ | VGS=-2.5V, ID=-6A | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.68 | -1.2 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-12V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-12V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Continuous Source Current | IS | -8 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -32 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSS2333 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files:
hss2333-etched.step/hss2333-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hss2333.step/hss2333.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
6497ee192ee317c3, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).