# HSS2319

**HUASHUO** · MOSFETs · SOT-23L

HSS2319 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.0 V to -2.5 V at ID=-250uA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous source (body diode) current is -3.2 A max. |
| 3 | D | passive | Drain; drain-source voltage is -40 V max and continuous drain current is -3.2 A at steady state (TA=25℃). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -40 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current 10s | ID@TA=25℃ |  |  | -3.7 | A | VGS @ -4.5V, 10s | 1 |
| Continuous Drain Current Steady State | ID@TA=25℃ |  |  | -3.2 | A | VGS @ -4.5V, steady state | 1 |
| Continuous Drain Current 10s | ID@TA=70℃ |  |  | -3 | A | VGS @ -4.5V, 10s | 1 |
| Continuous Drain Current Steady State | ID@TA=70℃ |  |  | -2.6 | A | VGS @ -4.5V, steady state | 1 |
| Pulsed Drain Current | IDM |  |  | -16.1 | A |  | 1 |
| Total Power Dissipation 10s | PD@TA=25℃ |  |  | 1.32 | W | 10s | 1 |
| Total Power Dissipation Steady State | PD@TA=25℃ |  |  | 1 | W | steady state | 1 |
| Total Power Dissipation 10s | PD@TA=70℃ |  |  | 0.84 | W | 10s | 1 |
| Total Power Dissipation Steady State | PD@TA=70℃ |  |  | 0.64 | W | steady state | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 125 | ℃/W |  | 1 |
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA |  |  | 95 | ℃/W | t ≤10s | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 80 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -40 |  |  | V | VGS=0V , ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 70 | mΩ | VGS=-4.5V , ID=-3A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 100 | mΩ | VGS=-2.5V , ID=-2A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 |  | -2.5 | V | VGS=VDS , ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | -5 | uA | VDS=-24V , VGS=0V , TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Continuous Source Current | IS |  |  | -3.2 | A | VG=VD=0V , Force Current | 2 |
| Pulsed Source Current | ISM |  |  | -16.1 | A | VG=VD=0V , Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | -1 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ |  | -0.018 |  | V/℃ | Reference to 25℃ , ID=-1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | 2.5 |  | mV/℃ |  | 2 |
| Forward Transconductance | gfs |  | 5.8 |  | S | VDS=-5V , ID=-3A | 2 |
| Total Gate Charge (-4.5V) | Qg |  | 6.4 |  | nC | VDS=-32V , VGS=-4.5V , ID=-3A | 2 |
| Gate-Source Charge | Qgs |  | 2.1 |  | nC | VDS=-32V , VGS=-4.5V , ID=-3A | 2 |
| Gate-Drain Charge | Qgd |  | 2.5 |  | nC | VDS=-32V , VGS=-4.5V , ID=-3A | 2 |
| Turn-On Delay Time | Td(on) |  | 4.2 |  | ns | VDD=-20V , VGS=-4.5V , RG=3.3, ID=-3A | 2 |
| Rise Time | Tr |  | 23 |  | ns | VDD=-20V , VGS=-4.5V , RG=3.3, ID=-3A | 2 |
| Turn-Off Delay Time | Td(off) |  | 26.8 |  | ns | VDD=-20V , VGS=-4.5V , RG=3.3, ID=-3A | 2 |
| Fall Time | Tf |  | 20.6 |  | ns | VDD=-20V , VGS=-4.5V , RG=3.3, ID=-3A | 2 |
| Input Capacitance | Ciss |  | 620 |  | pF | VDS=-15V , VGS=0V , f=1MHz | 2 |
| Output Capacitance | Coss |  | 65 |  | pF | VDS=-15V , VGS=0V , f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 53 |  | pF | VDS=-15V , VGS=0V , f=1MHz | 2 |

## CAD (KiCad official)

- Symbol: `HSS2319`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files: `hss2319-etched.step` / `hss2319-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hss2319.step` / `hss2319.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](docs/hss2319-datasheet.pdf) (5 pp, sha256 `57ad4596a58a5327`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hss2319-datasheet.pdf)