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HSS2307

Public Made by Adom

by adom

HUASHUO MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSS2307

HUASHUO · MOSFETs · SOT-23L

HSS2307 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the P-channel MOSFET, with VGS rated ±12 V and threshold VGS(th) of -0.5 to -1.0 V at ID=-250uA.
2 S passive Source; P-channel source terminal, with continuous source current IS up to -6 A and pulsed ISM of -24 A.
3 D passive Drain; VDS rated -20 V, continuous drain current -6 A at TA=25℃ and pulsed IDM of -24 A.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOT-23L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current, TA=25℃ ID@TA=25℃ -6 A VGS @ -4.5V 1
Continuous Drain Current, TA=70℃ ID@TA=70℃ -4 A VGS @ -4.5V 1
Pulsed Drain Current IDM -24 A 1
Total Power Dissipation, TA=25℃ PD@TA=25℃ 1.4 W 1
Total Power Dissipation, TA=70℃ PD@TA=70℃ 0.9 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V , ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 20 25 mΩ VGS=-4.5V , ID=-6A 2
Static Drain-Source On-Resistance RDS(ON) 25 30 mΩ VGS=-2.5V , ID=-5A 2
Static Drain-Source On-Resistance RDS(ON) 38 45 mΩ VGS=-1.8V , ID=-3A 2
Gate Threshold Voltage VGS(th) -0.5 -0.7 -1 V VGS=VDS , ID =-250uA 2
Drain-Source Leakage Current, TJ=25℃ IDSS -1 uA VDS=-16V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current, TJ=55℃ IDSS -5 uA VDS=-16V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V , VDS=0V 2
Continuous Source Current IS -6 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM -24 A 2
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 2
Thermal Resistance Junction-Ambient RθJA 125 ℃/W 1
Thermal Resistance Junction-Ambient (t ≤10s) RθJA 90 ℃/W t ≤10s 1

CAD (KiCad official)

  • Symbol: HSS2307
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23L (KiCad packages3D, STEP)
  • 3D model files: hss2307-etched.step / hss2307-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hss2307.step / hss2307.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 1af95d0fbea6a54d, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF