component
HSS2012
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HUASHUO MOSFETs, SOT-23L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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HSS2012
HUASHUO · MOSFETs · SOT-23L
HSS2012 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-source voltage of ±12 V and threshold of 0.5 V min to 1.0 V max at 250 uA. |
| 2 | S | passive | Source; main current terminal, continuous current up to 6.8 A at TA=25℃ and pulsed up to 26 A. |
| 3 | D | passive | Drain; rated for a 20 V maximum drain-source voltage, with RDS(ON) typ 10 mΩ at VGS=4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 10 | 14 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 21 | mΩ | VGS=2.5V, ID=5A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS=0V | 2 | |
| Continuous Source Current | IS | 6.8 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 26 | A | Pulsed source current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | Printed as ±12 V | 1 | |
| Continuous Drain Current | ID | 6.8 | A | TA=25℃, VGS @ 4.5V | 1 | ||
| Continuous Drain Current | ID | 5.3 | A | TA=70℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 26 | A | Pulsed drain current | 1 | ||
| Total Power Dissipation | PD | 1.25 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | PD | 0.76 | W | TA=70℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 100 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 |
CAD (KiCad official)
- Symbol:
HSS2012 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files:
hss2012-etched.step/hss2012-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hss2012.step/hss2012.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
44a06270f2dc0aa3, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# HSS2012
**HUASHUO** · MOSFETs · SOT-23L
HSS2012 from HUASHUO, in a SOT-23L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-source voltage of ±12 V and threshold of 0.5 V min to 1.0 V max at 250 uA. |
| 2 | S | passive | Source; main current terminal, continuous current up to 6.8 A at TA=25℃ and pulsed up to 26 A. |
| 3 | D | passive | Drain; rated for a 20 V maximum drain-source voltage, with RDS(ON) typ 10 mΩ at VGS=4.5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-23L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 10 | 14 | mΩ | VGS=4.5V, ID=6A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 21 | mΩ | VGS=2.5V, ID=5A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS | | | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V, VDS=0V | 2 |
| Continuous Source Current | IS | | | 6.8 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 26 | A | Pulsed source current | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | Printed as ±12 V | 1 |
| Continuous Drain Current | ID | | | 6.8 | A | TA=25℃, VGS @ 4.5V | 1 |
| Continuous Drain Current | ID | | | 5.3 | A | TA=70℃, VGS @ 4.5V | 1 |
| Pulsed Drain Current | IDM | | | 26 | A | Pulsed drain current | 1 |
| Total Power Dissipation | PD | | | 1.25 | W | TA=25℃ | 1 |
| Total Power Dissipation | PD | | | 0.76 | W | TA=70℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | | 100 | ℃/W | Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) | 1 |
## CAD (KiCad official)
- Symbol: `HSS2012`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23L (KiCad packages3D, STEP)
- 3D model files: `hss2012-etched.step` / `hss2012-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hss2012.step` / `hss2012.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HUASHUO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757799649212416000) (6 pp, sha256 `44a06270f2dc0aa3`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/hss2012-datasheet.pdf)